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説明:

We investigated non-plasma HCl-gas etching properties on (011) β-Ga2O3, which is an attracting surface orientation allowing pit-free homoepitaxy. The etching occurred selectively in window regions of a patterned SiO2 mask, and resulting side-etched structures were dependent on the in-plane directions of the window edges. Particularly, the side etching markedly reduced when the windows aligned with the [01-1] direction due to the formation of (100)-faceted sidewalls. Although the (100) sidewalls were slightly tilted from the surface normal by 6.5°, their surfaces were flat and free of plasma damage. Therefore, the crystallographic etching could be a promising microfabrication process on (011) β-Ga2O3.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://dx.doi.org/10.1088/1361-648X/ad906c.

キーワード: Ga2O3, crystallographic etching, (011)

刊行年月日: 2025-01-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 64 issue. 1 018003

研究助成金:

• TEPCO Memorial Foundation
• Japan Society for the Promotion of Science JP24K01368

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5326

公開URL: https://doi.org/10.35848/1347-4065/ada706

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更新時刻: 2026-01-24 15:43:35 +0900

MDRでの公開時刻: 2026-01-24 12:48:15 +0900