Download all files (4.16 MB)

Collection

Citation

Description:

We demonstrate a facile and safe anisotropic gas etching technique for β-Ga2O3 under atmospheric pressure using forming gas, a H2/N2 gas mixture containing 3.96 vol% H2. This etching gas, being neither explosive nor toxic, can be safely exhausted into the atmosphere, simplifying the etching system setup. Thermodynamic calculations confirm the viability of gas-phase etching above 676°C without the formation of Ga droplets. Experimental verification was achieved by etching (-102) β-Ga2O3 substrates within a temperature range of 700–950°C. Moreover, selective-area etching using this method yielded trenches and fins with vertical and flat sidewalls, defined by (100) facets with the lowest surface energy density, demonstrating significant anisotropic etching capability.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Ga2O3, forming gas, anisotropic etching, plasma-free process

Date published: 2024-12-31

Publisher: Informa UK Limited

Journal:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 25 issue. 1

Funding:

• TEPCO Memorial Foundation

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1080/14686996.2024.2378683

Related item:

Other identifier(s):

Contact agent:

Updated at: 2024-07-31 12:30:20 +0900

Published on MDR: 2024-07-31 12:30:20 +0900