キーワード: Ga2O3
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27 件のレコードが見つかりました。 1件目から10件目まで表示します。

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Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
ジャーナル論文
著者
Toshihide Nabatame (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Hiromi Miura (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Manami Miyamoto (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Takashi Onaya (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
ORCID ;
Yasuo Koide (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
ORCID SAMURAI
キーワード
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
刊行年月日
2026-06-01
更新時刻
2026-08-18 11:30:17 +0900
T. Oshima_Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography.docx
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
Ga2O3, lithography
刊行年月日
2023-01-01
更新時刻
2024-01-24 11:20:15 +0900
nohighlight_Sn_dopedGa2O3_240222_v2_revYY.pdf
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
ジャーナル論文
著者
Yuhua Tsai (author) (この著者で検索)
National Institute for Materials Science
ORCID ;
Masaaki Kobata (author) (この著者で検索)
ORCID ;
Tatsuo Fukuda (author) (この著者で検索)
ORCID ;
Hajime Tanida (author) (この著者で検索)
ORCID ;
Toru Kobayashi (author) (この著者で検索)
;
Yoshiyuki Yamashita (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
Ga2O3, dopant, b-Ga2O3
刊行年月日
2024-03-11
更新時刻
2024-03-19 12:30:20 +0900
Plasma-free anisotropic selective-area etching of -Ga2O3 using forming gas under atmospheric pressure_organized.pdf
Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
ジャーナル論文
著者
ORCID SAMURAI ;
Rie Togashi (author) (この著者で検索)
ORCID ; ORCID SAMURAI
キーワード
Ga2O3, forming gas, anisotropic etching, plasma-free process
刊行年月日
2024-12-31
更新時刻
2024-07-31 12:30:20 +0900
162102_1_5.0138736.pdf
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
Ga2O3, etching, HCl
刊行年月日
2023-04-17
更新時刻
2024-05-29 08:30:12 +0900
042110_1_5.0186319.pdf
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials
ORCID SAMURAI ;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials
ORCID SAMURAI
キーワード
Ga2O3, (-102), selective area growth, selective area etching
刊行年月日
2024-01-22
更新時刻
2025-01-25 12:30:12 +0900
APEX-107351.docx
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
Ga2O3, HCl gas etching
刊行年月日
2023-06-01
更新時刻
2024-06-15 08:30:13 +0900
Manuscript_final .docx
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
Ga2O3, selective area growth
刊行年月日
2022-07-01
更新時刻
2024-01-05 22:13:27 +0900
Oshima_2025_Appl._Phys._Express_18_116501-1.pdf
Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH)
ジャーナル論文
著者
ORCID SAMURAI
キーワード
Ga2O3, TMAH, wet etching, MEMS
刊行年月日
2025-11-01
更新時刻
2025-11-27 08:30:13 +0900
jjap_65_13_138001.pdf
(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga 2 O 3 homoepitaxial layers on (011) substrates
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI
キーワード
Ga2O3, (011), AFM, TEM
刊行年月日
2026-07-15
更新時刻
2026-07-09 10:29:39 +0900
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