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論文・データセット
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ジャーナル論文(10)
キーワード
Ga2O3 (10)
(011) (2)
HCl gas etching (2)
(-102) (1)
AFM (1)
Bandgap engineering (1)
HCl (1)
Superlattice (1)
TEM (1)
TMAH (1)
(more)
ライセンス
Creative Commons BY Attribution 4.0 International (5)
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (3)
In Copyright (2)
ファイル種別
application/pdf (8)
application/vnd.openxmlformats-officedocument.wordprocessingml.document (3)
キーワード: Ga2O3
全ての絞り込みを解除
10 件のレコードが見つかりました。
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Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
etching
,
HCl
刊行年月日
2023-04-17
更新時刻
2024-05-29 08:30:12 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
National Institute for Materials Science Research Center for Electronic and Optical Materials
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science Research Center for Electronic and Optical Materials
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
(-102)
,
selective area growth
,
selective area etching
刊行年月日
2024-01-22
更新時刻
2025-01-25 12:30:12 +0900
Plasma-free anisotropic selective-area etching of β-Ga
2
O
3
using forming gas under atmospheric pressure
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Rie Togashi
(author) (
この著者で検索
)
https://orcid.org/0000-0002-9467-0755
(unauthenticated)
Rie Togashi
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
forming gas
,
anisotropic etching
,
plasma-free process
刊行年月日
2024-12-31
更新時刻
2024-07-31 12:30:20 +0900
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
HCl gas etching
刊行年月日
2023-06-01
更新時刻
2024-06-15 08:30:13 +0900
Near-vertical plasma-free HCl gas etching on (011) β-Ga
2
O
3
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
crystallographic etching
,
(011)
刊行年月日
2025-01-01
更新時刻
2026-01-24 15:43:35 +0900
Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
HCl gas etching
,
air bridge
刊行年月日
2025-05-01
更新時刻
2025-05-07 12:30:22 +0900
Lattice-matched (Al
x
Sc
y
Ga1−
x
−
y
)2O3/
β
-Ga2O3 heterostructures with widely tunable bandgap
ジャーナル論文
著者
Kazuki Koreishi
(author) (
この著者で検索
)
https://orcid.org/0009-0000-1580-8262
(unauthenticated)
Kazuki Koreishi
;
Kodai Niitsu
(author) (
この著者で検索
)
https://orcid.org/0000-0002-0430-8868
NIMS Researchers Directory SAMURAI
Kodai Niitsu
;
Takuto Soma
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8685-9606
(unauthenticated)
Takuto Soma
;
Kohei Yoshimatsu
(author) (
この著者で検索
)
https://orcid.org/0000-0001-9288-068X
(unauthenticated)
Kohei Yoshimatsu
;
Akira Ohtomo
(author) (
この著者で検索
)
https://orcid.org/0000-0003-0300-4712
(unauthenticated)
Akira Ohtomo
キーワード
Ga2O3
,
Wide bandgap
,
Bandgap engineering
刊行年月日
2026-07-06
更新時刻
2026-08-06 09:39:59 +0900
Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
ジャーナル論文
著者
Yuji Kato
(author) (
この著者で検索
)
Yuji Kato
;
Masataka Imura
(author) (
この著者で検索
)
https://orcid.org/0000-0002-4236-9549
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Masataka Imura
;
Yoshiko Nakayama
(author) (
この著者で検索
)
https://orcid.org/0000-0002-7607-6779
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Yoshiko Nakayama
;
Masaki Takeguchi
(author) (
この著者で検索
)
https://orcid.org/0000-0002-0282-6020
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Masaki Takeguchi
;
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
キーワード
Ga2O3
,
Superlattice
刊行年月日
2019-06-01
更新時刻
2024-01-05 22:11:34 +0900
(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown
β-
Ga
2
O
3
homoepitaxial layers on (011) substrates
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
(011)
,
AFM
,
TEM
刊行年月日
2026-07-15
更新時刻
2026-07-09 10:29:39 +0900
Step-and-terrace surface formation on (001)
β
-Ga
2
O
3
by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
キーワード
Ga2O3
,
TMAH
,
Wet etching
刊行年月日
2025-08-01
更新時刻
2025-08-18 16:30:36 +0900
キーワード
Ga2O3
(10)
(011)
(2)
HCl gas etching
(2)
(-102)
(1)
AFM
(1)
Bandgap engineering
(1)
HCl
(1)
Superlattice
(1)
TEM
(1)
TMAH
(1)
Wet etching
(1)
Wide bandgap
(1)
air bridge
(1)
anisotropic etching
(1)
crystallographic etching
(1)
etching
(1)
forming gas
(1)
plasma-free process
(1)
selective area etching
(1)
selective area growth
(1)
RDEメタデータ定義
RDE送り状
<
1
>
絞り込み
コレクション
資源タイプ
ジャーナル論文(10)
キーワード
Ga2O3 (10)
(011) (2)
HCl gas etching (2)
(-102) (1)
AFM (1)
Bandgap engineering (1)
HCl (1)
Superlattice (1)
TEM (1)
TMAH (1)
(more)
ライセンス
Creative Commons BY Attribution 4.0 International (5)
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (3)
In Copyright (2)
ファイル種別
application/pdf (8)
application/vnd.openxmlformats-officedocument.wordprocessingml.document (3)