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Wet etching of (001) β-Ga2O3 was performed using a standard lithographic developer—an aqueous solution of 2.38 wt% tetramethylammonium hydroxide (TMAH)—at moderate temperatures of 25 °C and 40 °C. At both temperatures, the chemically-mechanically polished surfaces, which consisted of terraces with numerous pits and, in some samples, one- to two-monolayer-high islands, were gradually smoothed through a layer-by-layer etching process. This resulted in a well-defined step-and-terrace surface morphology characterized by pit-free, atomically flat terraces and monolayer steps (~0.56 nm). These findings indicate that developer-based etching offers a simple yet highly effective approach for preparing (001) β-Ga2O3 surfaces for subsequent epitaxial growth or device fabrication.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Ga2O3, TMAH, Wet etching

刊行年月日: 2025-08-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 64 issue. 8 088001

研究助成金:

• Japan Society for the Promotion of Science JP24K01368

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.35848/1347-4065/adf380

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更新時刻: 2025-08-18 16:30:36 +0900

MDRでの公開時刻: 2025-08-18 16:21:29 +0900