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Description:

Wet etching of (001) β-Ga2O3 was performed using a standard lithographic developer—an aqueous solution of 2.38 wt% tetramethylammonium hydroxide (TMAH)—at moderate temperatures of 25 °C and 40 °C. At both temperatures, the chemically-mechanically polished surfaces, which consisted of terraces with numerous pits and, in some samples, one- to two-monolayer-high islands, were gradually smoothed through a layer-by-layer etching process. This resulted in a well-defined step-and-terrace surface morphology characterized by pit-free, atomically flat terraces and monolayer steps (~0.56 nm). These findings indicate that developer-based etching offers a simple yet highly effective approach for preparing (001) β-Ga2O3 surfaces for subsequent epitaxial growth or device fabrication.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Ga2O3, TMAH, Wet etching

Date published: 2025-08-01

Publisher: IOP Publishing

Journal:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 64 issue. 8 088001

Funding:

• Japan Society for the Promotion of Science JP24K01368

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.35848/1347-4065/adf380

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Updated at: 2025-08-18 16:30:36 +0900

Published on MDR: 2025-08-18 16:21:29 +0900