Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
- Keyword
- Ga2O3, (-102), selective area growth, selective area etching
- Date published
- 2024-01-22
- Updated at
- 2025-01-25 12:30:12 +0900
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, etching, HCl
- Date published
- 2023-04-17
- Updated at
- 2024-05-29 08:30:12 +0900
Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Rie Togashi (author) (Search by this author)
https://orcid.org/0000-0002-9467-0755
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, forming gas, anisotropic etching, plasma-free process
- Date published
- 2024-12-31
- Updated at
- 2024-07-31 12:30:20 +0900
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3
- Journal article
- Creator
-
Lewis T. Penman (author) (Search by this author)
https://orcid.org/0000-0002-0147-9995
(unauthenticated)
;
;Zak M. Johnston (author) (Search by this author)Paul R. Edwards (author) (Search by this author)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
;
;Clifford McAleese (author) (Search by this author)Piero Mazzolini (author) (Search by this author)
https://orcid.org/0000-0003-2092-5265
(unauthenticated)
;
Matteo Bosi (author) (Search by this author)
https://orcid.org/0000-0001-8992-0249
(unauthenticated)
;
Luca Seravalli (author) (Search by this author)
https://orcid.org/0000-0003-2784-1785
(unauthenticated)
;
;Roberto Fornari (author) (Search by this author)Robert W. Martin (author) (Search by this author)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C.‐P. Massabuau (author) (Search by this author)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- Keyword
- Ga2O3
- Date published
- 2025-02-12
- Updated at
- 2025-08-18 16:30:52 +0900
Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takashi Shinohe (author) (Search by this author)
https://orcid.org/0009-0000-5559-1432
(unauthenticated)
- Keyword
- Ga2O3, dislocation, ELO, HVPE
- Date published
- 2025-12-31
- Updated at
- 2025-04-23 12:30:12 +0900
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, HCl gas etching
- Date published
- 2023-06-01
- Updated at
- 2024-06-15 08:30:13 +0900
Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, HCl gas etching, air bridge
- Date published
- 2025-05-01
- Updated at
- 2025-05-07 12:30:22 +0900
High Schottky barrier formation in tilted-dipole PdCoO2/ β -Ga2O3 (001) interfaces
- Journal article
- Creator
-
Takayuki Harada (author) (Search by this author)
;
Takuro Nagai (author) (Search by this author)
;
Kohei Sasaki (author) (Search by this author)
https://orcid.org/0000-0002-8923-7703
(unauthenticated)
- Keyword
- Thin film, Ga2O3, Delafossite, Power devices, Schottky
- Date published
- 2026-06-01
- Updated at
- 2026-06-10 14:51:59 +0900
Near-vertical plasma-free HCl gas etching on (011) β-Ga2O3
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, crystallographic etching, (011)
- Date published
- 2025-01-01
- Updated at
- 2026-01-24 15:43:35 +0900