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説明:

We report the growth and Schottky junction characteristics of metallic delafossite PdCoO2/β-Ga2O3 (001) heterostructures. The PdCoO2 thin films predominantly grow with the epitaxial relationship of PdCoO2 (006)//β-Ga2O3 (202), forming a high-quality oxide–oxide interface. Despite a 24° tilt between the PdCoO2 surface polarization axis and the β-Ga2O3 (001) surface normal, a large Schottky barrier height of
 > 1.7 eV was achieved. This value is comparable with that reported for PdCoO2/β-Ga2O3 (⁠

01) where the PdCoO2 surface polarization axis is perpendicular to the interface. The PdCoO2/β-Ga2O3 (001) Schottky junctions showed a large on–off ratio of ∼108 at 573 K. These results demonstrate the feasibility of delafossite-type electrodes for β-Ga2O3 (001) heterostructures with high-quality homoepitaxial β-Ga2O3 layers.

権利情報:

• In Copyright
  

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Takayuki Harada, Takuro Nagai, Kohei Sasaki; High Schottky barrier formation in tilted-dipole PdCoO2/β-Ga2O3 (001) interfaces. Appl. Phys. Lett. 1 June 2026; 128 (22): 222101 and may be found at https://doi.org/10.1063/5.0332733.

キーワード: Thin film, Ga2O3, Delafossite, Power devices, Schottky

刊行年月日: 2026-06-01

出版者: AIP Publishing

掲載誌:

• Applied Physics Letters (ISSN: 00036951) vol. 128 issue. 22 222101

研究助成金:

• Japan Society for the Promotion of Science JPMXS0320200047
• Japan Society for the Promotion of Science 24K01353
• Japan Science and Technology Agency JPMJPR20AD

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6334

公開URL: https://doi.org/10.1063/5.0332733

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更新時刻: 2026-06-10 14:51:59 +0900

MDRでの公開時刻: 2026-06-10 17:29:40 +0900