25 records found.
Current-induced brightening of vacancy-related emitters in hexagonal boron nitride
- Journal article
- Creator
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;Corinne Steiner (author) (Search by this author);Rebecca Rahmel (author) (Search by this author);Frank Volmer (author) (Search by this author);Rika Windisch (author) (Search by this author);Lars H. Janssen (author) (Search by this author);Patricia Pesch (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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;Florian Libisch (author) (Search by this author);Bernd Beschoten (author) (Search by this author);Christoph Stampfer (author) (Search by this author)Annika Kurzmann (author) (Search by this author) - Keyword
- hexagonal boron nitride, vacancy-related emitters , photoluminescence
- Date published
- 2025-08-19
- Updated at
- 2026-02-16 16:31:11 +0900
Electroluminescence from a phthalocyanine monolayer encapsulated in a van der Waals tunnel diode
- Journal article
- Creator
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;Tyler James (author) (Search by this author);Jonathan Bradford (author) (Search by this author);James Kerfoot (author) (Search by this author);Vladimir V. Korolkov (author) (Search by this author);Manal Alkhamisi (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
;Anton S. Nizovtsev (author) (Search by this author);Elisa Antolín (author) (Search by this author);Elena Besley (author) (Search by this author);Simon A. Svatek (author) (Search by this author)Peter H. Beton (author) (Search by this author)
- Keyword
- Phthalocyanine, hexagonal boron nitride, electroluminescence
- Date published
- 2023-04-18
- Updated at
- 2025-02-14 16:30:38 +0900
Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride
- Journal article
- Creator
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;Clarisse Fournier (author) (Search by this author);Alexandre Plaud (author) (Search by this author);Sébastien Roux (author) (Search by this author);Aurélie Pierret (author) (Search by this author);Michael Rosticher (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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;Stéphanie Buil (author) (Search by this author);Xavier Quélin (author) (Search by this author);Julien Barjon (author) (Search by this author);Jean-Pierre Hermier (author) (Search by this author)Aymeric Delteil (author) (Search by this author)
- Keyword
- Single photon emitters, hexagonal boron nitride, quantum emitters
- Date published
- 2021-06-18
- Updated at
- 2025-02-27 12:30:29 +0900
Midgap radiative centers in carbon-enriched hexagonal boron nitride
- Journal article
- Creator
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;Maciej Koperski (author) (Search by this author);Diana Vaclavkova (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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;Kostya S. Novoselov (author) (Search by this author)Marek Potemski (author) (Search by this author)
- Keyword
- Defect centers, hexagonal boron nitride, single-photon sources
- Date published
- 2020-06-16
- Updated at
- 2025-02-28 16:30:43 +0900
Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor
- Journal article
- Creator
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Yosuke Sasama (author) (Search by this author)
;
Takuya Iwasaki (author) (Search by this author)
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Masataka Imura (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
;
Yamaguchi Takahide (author) (Search by this author)
- Keyword
- diamond, field-effect transistors, hexagonal boron nitride
- Date published
- 2025-10-06
- Updated at
- 2025-10-21 16:06:02 +0900
Systematic investigation of dynamic nuclear polarization with boron vacancy in hexagonal boron nitride
- Journal article
- Creator
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;Yuki Nakamura (author) (Search by this author);Shunsuke Nishimura (author) (Search by this author)Takuya Iwasaki (author) (Search by this author)National Institute for Materials Science
;
Shu Nakaharai (author) (Search by this author)
https://orcid.org/0000-0002-6329-3942
(unauthenticated)
National Institute for Materials Science
;
;Shinichi Ogawa (author) (Search by this author);Yukinori Morita (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
;Kento Sasaki (author) (Search by this author)Kensuke Kobayashi (author) (Search by this author) - Keyword
- vacancy, optically detected magnetic resonance, dynamic nuclear polarization, hexagonal boron nitride
- Date published
- 2025-05-02
- Updated at
- 2025-05-22 12:30:18 +0900
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
- Journal article
- Creator
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Yosuke Sasama (author) (Search by this author)
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Takuya Iwasaki (author) (Search by this author)
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Mohammad Monish (author) (Search by this author)
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Kenji Watanabe (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
;
Yamaguchi Takahide (author) (Search by this author)
- Keyword
- Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode
- Date published
- 2024-08-26
- Updated at
- 2024-09-12 16:30:45 +0900
Self-selective van der Waals heterostructures for large scale memory array
- Journal article
- Creator
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;Linfeng Sun (author) (Search by this author);Yishu Zhang (author) (Search by this author);Gyeongtak Han (author) (Search by this author);Geunwoo Hwang (author) (Search by this author);Jinbao Jiang (author) (Search by this author);Bomin Joo (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
;Young-Min Kim (author) (Search by this author);Woo Jong Yu (author) (Search by this author);Bai-Sun Kong (author) (Search by this author);Rong Zhao (author) (Search by this author)Heejun Yang (author) (Search by this author)
- Keyword
- Crossbar array, memory cell, hexagonal boron nitride
- Date published
- 2019-07-18
- Updated at
- 2025-02-23 22:49:49 +0900
All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping?
- Journal article
- Creator
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;Lukas Renn (author) (Search by this author);Lisa S. Walter (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
R. Thomas Weitz (author) (Search by this author)
- Keyword
- Charge transport, organic semiconducting crystals, hexagonal boron nitride
- Date published
- 2022-01-29
- Updated at
- 2025-02-26 08:30:49 +0900
Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride
- Journal article
- Creator
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;Håkon I. Røst (author) (Search by this author);Simon P. Cooil (author) (Search by this author);Anna Cecilie Åsland (author) (Search by this author);Jinbang Hu (author) (Search by this author);Ayaz Ali (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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;Branson D. Belle (author) (Search by this author);Bodil Holst (author) (Search by this author);Jerzy T. Sadowski (author) (Search by this author);Federico Mazzola (author) (Search by this author)Justin W. Wells (author) (Search by this author)
- Keyword
- Quasiparticles, hexagonal boron nitride, many-body effects
- Date published
- 2023-08-23
- Updated at
- 2025-02-14 16:31:03 +0900