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説明:

Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological steps towards scalable quantum photonic devices. Here, we demonstrate SPEs in high purity synthetic hexagonal boron nitride (hBN) that can be activated by an electron beam at chosen locations, with a spatial accuracy better than the cubed emission wavelength. Stable and bright single photon emission is subsequently observed in the visible range up to room temperature upon non-resonant laser excitation. Moreover, the low-temperature emission wavelength is reproducible within a range of 5 meV, a statistical dispersion that is two orders of magnitude lower than what is usually observed for colour centres in hBN. Our findings constitute an essential step towards the realization of top-down integrated devices based on identical quantum emitters in 2D materials.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Single photon emitters, hexagonal boron nitride, quantum emitters

刊行年月日: 2021-06-18

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 12 issue. 1 3779

研究助成金:

• Centre National de la Recherche Scientifique

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-021-24019-6

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更新時刻: 2025-02-27 12:30:29 +0900

MDRでの公開時刻: 2025-02-27 12:30:29 +0900