Clarisse Fournier
;
Alexandre Plaud
;
Sébastien Roux
;
Aurélie Pierret
;
Michael Rosticher
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Stéphanie Buil
;
Xavier Quélin
;
Julien Barjon
;
Jean-Pierre Hermier
;
Aymeric Delteil
Description:
(abstract)Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological steps towards scalable quantum photonic devices. Here, we demonstrate SPEs in high purity synthetic hexagonal boron nitride (hBN) that can be activated by an electron beam at chosen locations, with a spatial accuracy better than the cubed emission wavelength. Stable and bright single photon emission is subsequently observed in the visible range up to room temperature upon non-resonant laser excitation. Moreover, the low-temperature emission wavelength is reproducible within a range of 5 meV, a statistical dispersion that is two orders of magnitude lower than what is usually observed for colour centres in hBN. Our findings constitute an essential step towards the realization of top-down integrated devices based on identical quantum emitters in 2D materials.
Rights:
Keyword: Single photon emitters, hexagonal boron nitride, quantum emitters
Date published: 2021-06-18
Publisher: Springer Science and Business Media LLC
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1038/s41467-021-24019-6
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Updated at: 2025-02-27 12:30:29 +0900
Published on MDR: 2025-02-27 12:30:29 +0900
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