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説明:

The massively integrated crossbar array is a highly promising architecture for next-generation three-dimensional (3D) memory and neuromorphic computing systems. However, accessing a specific memory cell with negligible influence on innumerable unselected memory cells, generally known as sneak current, remains a fundamental issue. Here, we report a self-selective memory cell based on two-dimensional (2D) hexagonal boron nitride (h-BN) and graphene in a vertical heterostructure of h-BN/graphene/h-BN. The self-selectivity, defined as the resistance ratio of selected and unselected memory cells, exceeds 10^10 over a wide voltage window in our memory cell, which originates from volatile silver (Ag) filaments and non-volatile boron vacancies inside two separated h-BN layers with impermeable graphene located between these two h-BN layers as a filament-blocking layer. Moreover, the chemically inert interface between the h-BN and graphene layers creates rapid filament-forming dynamics with a time constant of tens of nanoseconds. The record-high selectivity over a wide voltage window greatly minimizes the effects of sneak current on integrated memory operation, thereby achieving a practical readout margin for terabit-scale and energy-efficient memory integration. The self-selective van der Waals heterostructure not only provides an ideal memory compatible with flexible substrates for wearable electronic applications but also is greatly instrumental in constructing 3D stackable memory and neuromorphic systems.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Crossbar array, memory cell, hexagonal boron nitride

刊行年月日: 2019-07-18

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 10 issue. 1

研究助成金:

• Samsung SRFC-MA1701-01

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-019-11187-9

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更新時刻: 2025-02-23 22:49:49 +0900

MDRでの公開時刻: 2025-02-23 22:49:49 +0900