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We perform photoluminescence measurements on vacancy-related emitters in hexagonal boron nitride (hBN) that are notorious for their low quantum yields. The gating of these emitters via few-layer graphene electrodes reveals a reproducible, gate-dependent brightening of the emitter, which coincides with a change in the direction of the simultaneously measured leakage current across the hBN layers. At the same time, we observe that the relative increase of the brightening effect scales with the intensity of the excitation laser. Both observations can be explained in terms of a photo-assisted electroluminescence effect. Interestingly, emitters can also show the opposite behavior, i.e. a decrease in emitter intensity that depends on the gate leakage current. We explain these two completely different behaviors with different concentrations of donor and acceptor states in the hBN and show that precise control of the doping of hBN is necessary to gain control over the brightness of dark emitters by electrical means. Our findings contribute to a deeper understanding of vacancy-related defects that is necessary to make use of their potential for quantum information processing.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: hexagonal boron nitride, vacancy-related emitters
, photoluminescence


刊行年月日: 2025-08-19

出版者: American Physical Society (APS)

掲載誌:

• Physical Review Research (ISSN: 26431564) vol. 7 issue. 3 L032037

研究助成金:

• Deutsche Forschungsgemeinschaft EXC 2004/1 - 390534769
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052
• Austrian Science Fund 10.55776/DOC142
• Austrian Science Fund 10.55776/COE5

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1103/cd62-5hq8

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更新時刻: 2026-02-16 16:31:11 +0900

MDRでの公開時刻: 2026-02-16 13:57:33 +0900