Keyword: Ga2O3
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11 records found. Displaying records 1 to 10.

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Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
Journal article
Creator
Toshihide Nabatame (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Hiromi Miura (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Manami Miyamoto (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Takashi Onaya (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID ;
Yasuo Koide (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
Date published
2026-06-01
Updated at
2026-08-18 11:30:17 +0900
APL26-AR-02454_accepted_manuscript.pdf
High Schottky barrier formation in tilted-dipole PdCoO2/ β -Ga2O3 (001) interfaces
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI ;
Kohei Sasaki (author) (Search by this author)
ORCID
Keyword
Thin film, Ga2O3, Delafossite, Power devices, Schottky
Date published
2026-06-01
Updated at
2026-06-10 14:51:59 +0900
HCl-gas etching behavior of 001 -Ga2O3 under oxygen supply.pdf
HCl-gas etching of (001) β-Ga2O3 under oxygen supply
Journal article
Creator
Yuichi Oshima (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI ;
Takayoshi Oshima (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, etching, plasma-free
Date published
2025-12-31
Updated at
2025-09-04 12:30:19 +0900
Manuscript_final .docx
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
Journal article
Creator
Takayoshi Oshima (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Yuichi Oshima (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, selective area growth
Date published
2022-07-01
Updated at
2024-01-05 22:13:27 +0900
162102_1_5.0138736.pdf
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Journal article
Creator
Takayoshi Oshima (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Yuichi Oshima (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, etching, HCl
Date published
2023-04-17
Updated at
2024-05-29 08:30:12 +0900
Suplementary.pdf
Near-vertical plasma-free HCl gas etching on (011) β-Ga2O3
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI
Keyword
Ga2O3, crystallographic etching, (011)
Date published
2025-01-01
Updated at
2026-01-24 15:43:35 +0900
Epitaxial lateral overgrowth of m-plane -Ga2O3 by halide vapor phase epitaxy-1.pdf
Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
Journal article
Creator
ORCID SAMURAI ;
Takashi Shinohe (author) (Search by this author)
ORCID
Keyword
Ga2O3, dislocation, ELO, HVPE
Date published
2025-12-31
Updated at
2025-04-23 12:30:12 +0900
paper_-112.pdf
HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga 2 O 3
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI
Keyword
Ga2O3, (−112), HVPE, HCl gas etching
Date published
2026-12-31
Updated at
2026-07-16 10:12:49 +0900
J_Appl_Phys_139_075302_(2026).pdf
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI ;
Shiyu Xiao (author) (Search by this author)
ORCID ;
Kazuto Murakami (author) (Search by this author)
;
Katsuhiro Imai (author) (Search by this author)
;
Takahiro Tomita (author) (Search by this author)
Keyword
Ga2O3, HVPE, Cr2O3
Date published
2026-02-21
Updated at
2026-02-18 16:30:15 +0900
APEX-107351.docx
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
Journal article
Creator
Takayoshi Oshima (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Yuichi Oshima (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, HCl gas etching
Date published
2023-06-01
Updated at
2024-06-15 08:30:13 +0900
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