High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
- Journal article
- Creator
-
;Qihao Zhang (author) (Search by this author)Jiangwei Liu (author) (Search by this author)National Institute for Materials Science
;
;Chunming Tu (author) (Search by this author);Dongyuan Zhai (author) (Search by this author);Min He (author) (Search by this author)Jiwu Lu (author) (Search by this author) - Keyword
- Ga2O3, Transistor
- Date published
- 2023-01-03
- Updated at
- 2025-01-04 16:30:50 +0900
Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3
- Book
- Creator
-
大島祐一 (author) (Search by this author)Research Center for Functional Materials/Optical Materials Field/Optical Single Crystals Group, National Institute for Materials Science
- Keyword
- Ga2O3, HVPE
- Date published
- 2020-04-24
- Updated at
- 2024-01-30 10:29:29 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
;
Shiyu Xiao (author) (Search by this author)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (Search by this author);Katsuhiro Imai (author) (Search by this author)Takahiro Tomita (author) (Search by this author) - Keyword
- Ga2O3, HVPE, Cr2O3
- Date published
- 2026-02-21
- Updated at
- 2026-02-18 16:30:15 +0900
Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
- Journal article
- Creator
-
;Yuji Kato (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Yoshiko Nakayama (author) (Search by this author)National Institute for Materials Science
;
Masaki Takeguchi (author) (Search by this author)National Institute for Materials Science
;
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, Superlattice
- Date published
- 2019-06-01
- Updated at
- 2024-01-05 22:11:34 +0900
Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Rie Togashi (author) (Search by this author)
https://orcid.org/0000-0002-9467-0755
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, forming gas, anisotropic etching, plasma-free process
- Date published
- 2024-12-31
- Updated at
- 2024-07-31 12:30:20 +0900
Materials issues and devices of α- and β-Ga2O3
- Journal article
- Creator
-
;Elaheh Ahmadi (author) (Search by this author)Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, power device, epitaxy
- Date published
- 2019-10-28
- Updated at
- 2024-01-29 15:08:11 +0900
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, etching, HCl
- Date published
- 2023-04-17
- Updated at
- 2024-05-29 08:30:12 +0900
Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap
- Journal article
- Creator
-
Kazuki Koreishi (author) (Search by this author)
https://orcid.org/0009-0000-1580-8262
(unauthenticated)
;
Kodai Niitsu (author) (Search by this author)
;
Takuto Soma (author) (Search by this author)
https://orcid.org/0000-0001-8685-9606
(unauthenticated)
;
Kohei Yoshimatsu (author) (Search by this author)
https://orcid.org/0000-0001-9288-068X
(unauthenticated)
;
Akira Ohtomo (author) (Search by this author)
https://orcid.org/0000-0003-0300-4712
(unauthenticated)
- Keyword
- Ga2O3, Wide bandgap, Bandgap engineering
- Date published
- 2026-07-06
- Updated at
- 2026-08-06 09:39:59 +0900
Epitaxial relationship of NiO on (-102) β-Ga2O3
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Shinji Nakagomi (author) (Search by this author)Faculty of Science and Engineering, Ishinomaki Senshu University
- Keyword
- Ga2O3, NiO, epitaxial relationship
- Date published
- 2023-12-01
- Updated at
- 2024-11-23 16:30:35 +0900
Luminescence properties of dislocations in α-Ga2O3
- Journal article
- Creator
-
Mugove Maruzane (author) (Search by this author)
https://orcid.org/0009-0004-9207-0424
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
;
Olha Makydonska (author) (Search by this author)
https://orcid.org/0009-0008-5562-2137
(unauthenticated)
;
Paul R Edwards (author) (Search by this author)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Robert W Martin (author) (Search by this author)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C-P Massabuau (author) (Search by this author)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- Keyword
- Ga2O3, dislocation
- Date published
- 2025-01-20
- Updated at
- 2024-11-13 08:31:40 +0900