28 records found.
Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications
- Journal article
- Creator
-
Hitoshi Takane (author) (Search by this author)
https://orcid.org/0000-0001-8866-145X
(unauthenticated)
;
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Takayuki Harada (author) (Search by this author)National Institute for Materials Science
;
Kentaro Kaneko (author) (Search by this author)
https://orcid.org/0000-0001-6626-7611
(unauthenticated)
;
Katsuhisa Tanaka (author) (Search by this author)
https://orcid.org/0000-0002-1409-2802
(unauthenticated)
- Keyword
- GeO2, SnO2, TiO2
- Date published
- 2024-01-01
- Updated at
- 2024-02-01 09:41:54 +0900
Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
- Journal article
- Creator
-
;Yuji Kato (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Yoshiko Nakayama (author) (Search by this author)National Institute for Materials Science
;
Masaki Takeguchi (author) (Search by this author)National Institute for Materials Science
;
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, Superlattice
- Date published
- 2019-06-01
- Updated at
- 2024-01-05 22:11:34 +0900
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Yuji Kato (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Yoshiko Nakayama (author) (Search by this author)National Institute for Materials Science
;
Masaki Takeguchi (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, Superlattice
- Date published
- 2018-06-01
- Updated at
- 2024-01-05 22:12:13 +0900
Epitaxial relationship of NiO on (-102) β-Ga2O3
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Shinji Nakagomi (author) (Search by this author)Faculty of Science and Engineering, Ishinomaki Senshu University
- Keyword
- Ga2O3, NiO, epitaxial relationship
- Date published
- 2023-12-01
- Updated at
- 2024-11-23 16:30:35 +0900
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, HCl gas etching
- Date published
- 2023-06-01
- Updated at
- 2024-06-15 08:30:13 +0900
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, selective area growth
- Date published
- 2022-07-01
- Updated at
- 2024-01-05 22:13:27 +0900
Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate
- Journal article
- Creator
-
;Hitoshi Takane (author) (Search by this author)Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Katsuhisa Tanaka (author) (Search by this author)Kentaro Kaneko (author) (Search by this author)
- Keyword
- SnO2, selective area growth
- Date published
- 2023-04-01
- Updated at
- 2024-04-14 08:30:12 +0900
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, lithography
- Date published
- 2023-01-01
- Updated at
- 2024-01-24 11:20:15 +0900