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We demonstrated selective-area growth of r-SnO2 on a SiO2-masked r-TiO2 (110) substrate. The heteroepitaxy on a window started with a Volmer–Weber mode to grow islands with {100}-, {1-10}-, and {011}-faceted sidewalls, whose growth shapes were consistent with the rutile structure’s equilibrium shape. The islands coalesced each other to make a flat (110) top surface on a striped window, and lateral overgrowth started after the complete coverage of the window. Cross-sectional transmission-electron-microscopy observation of the stripe revealed that misfit dislocations propagated perpendicularly to the facet planes by the image force effect and that the dislocation density reduced substantially in the wing regions.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  © 2023 The Japan Society of Applied Physics
  
  This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
  any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/acc82b.

キーワード: SnO2, selective area growth

刊行年月日: 2023-04-01

出版者: IOP Publishing

掲載誌:

• Applied Physics Express (ISSN: 18820778) vol. 16 issue. 4 p. 45503-45503

研究助成金:

• the Nippon Sheet Glass Foundation for Materials Science and Engineering
• Japan Science and Technology Agency (JST), the Establishment of University Fellowships toward the Creation of Science and Technology Innovation JPMJFS2123

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4265

公開URL: https://doi.org/10.35848/1882-0786/acc82b

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更新時刻: 2024-04-14 08:30:12 +0900

MDRでの公開時刻: 2024-04-14 08:30:13 +0900