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We demonstrated selective-area growth of r-SnO2 on a SiO2-masked r-TiO2 (110) substrate. The heteroepitaxy on a window started with a Volmer–Weber mode to grow islands with {100}-, {1-10}-, and {011}-faceted sidewalls, whose growth shapes were consistent with the rutile structure’s equilibrium shape. The islands coalesced each other to make a flat (110) top surface on a striped window, and lateral overgrowth started after the complete coverage of the window. Cross-sectional transmission-electron-microscopy observation of the stripe revealed that misfit dislocations propagated perpendicularly to the facet planes by the image force effect and that the dislocation density reduced substantially in the wing regions.

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• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  © 2023 The Japan Society of Applied Physics
  
  This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
  any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/acc82b.

Keyword: SnO2, selective area growth

Date published: 2023-04-01

Publisher: IOP Publishing

Journal:

• Applied Physics Express (ISSN: 18820778) vol. 16 issue. 4 p. 45503-45503

Funding:

• the Nippon Sheet Glass Foundation for Materials Science and Engineering
• Japan Science and Technology Agency (JST), the Establishment of University Fellowships toward the Creation of Science and Technology Innovation JPMJFS2123

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4265

First published URL: https://doi.org/10.35848/1882-0786/acc82b

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Updated at: 2024-04-14 08:30:12 +0900

Published on MDR: 2024-04-14 08:30:13 +0900