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説明:

We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostructural TiO2(001) substrates. The grown surface was flat throughout the growth owing to the lattice-matching epitaxy. Additionally, the film was single-crystalline without misoriented domains and TEM-detectable threading dislocations due to the coherent heterointerface. Using the Ge0.49Sn0.51O2 film with a carrier density of 7.8 × 1018 cm−3 and a mobility of 24 cm2V−1s−1, lateral Schottky barrier diodes were fabricated with Pt anodes and Ti/Au cathodes. The diodes exhibited rectifying properties with a rectification ratio of 8.2 × 104 at ±5 V, showing the potential of GexSn1-xO2 as a practical semiconductor.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: GeO2, SnO2, TiO2

刊行年月日: 2024-01-01

出版者: IOP Publishing

掲載誌:

• Applied Physics Express (ISSN: 18820778) vol. 17 issue. 1 p. 11008-11008

研究助成金:

• 日本板硝子材料工学助成会

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.35848/1882-0786/ad15f3

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更新時刻: 2024-02-01 09:41:54 +0900

MDRでの公開時刻: 2024-01-30 12:30:23 +0900