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Description:

We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostructural TiO2(001) substrates. The grown surface was flat throughout the growth owing to the lattice-matching epitaxy. Additionally, the film was single-crystalline without misoriented domains and TEM-detectable threading dislocations due to the coherent heterointerface. Using the Ge0.49Sn0.51O2 film with a carrier density of 7.8 × 1018 cm−3 and a mobility of 24 cm2V−1s−1, lateral Schottky barrier diodes were fabricated with Pt anodes and Ti/Au cathodes. The diodes exhibited rectifying properties with a rectification ratio of 8.2 × 104 at ±5 V, showing the potential of GexSn1-xO2 as a practical semiconductor.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: GeO2, SnO2, TiO2

Date published: 2024-01-01

Publisher: IOP Publishing

Journal:

• Applied Physics Express (ISSN: 18820778) vol. 17 issue. 1 p. 11008-11008

Funding:

• 日本板硝子材料工学助成会

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.35848/1882-0786/ad15f3

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Updated at: 2024-02-01 09:41:54 +0900

Published on MDR: 2024-01-30 12:30:23 +0900