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11 records found.

Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron Beam.pdf
Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron Beam
Article
Creator
A. Uedono ORCID ; R. Tanaka ORCID ; S. Takashima ORCID ; K. Ueno ; M. Edo ; K. Shima ORCID ; S. F. Chichibu ; J. Uzuhashi SAMURAI ORCID ; T. Ohkubo SAMURAI ORCID ; S. Ishibashi ORCID ; K. Sierakowski ; M. Bockowski ORCID
Keyword
gallium nitride
Date published
2025-08-27
Updated at
2026-01-05 13:57:59 +0900
Uedono-et-al_IWJT2025_Proceedings.pdf
Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam
Proceedings
Creator
Akira Uedono ; Ryo Tanaka ; Shinya Takashima ; Katsunori Ueno ; Masaharu Edo ; Kohei Shima ; Shigefusa F. Chichibu ; Jun Uzuhashi SAMURAI ORCID ; Tadakatsu Ohkubo SAMURAI ORCID ; Shoji Ishibashi ; Kacper Sierakowski ; Michal Bockowski
Keyword
gallium nitride
Date published
2025-06-04
Updated at
2025-09-17 16:30:20 +0900
095304_1_5.0224068.pdf
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
Article
Creator
Takahiro Nagata SAMURAI ORCID ; Asahiko Matsuda SAMURAI ORCID ; Takashi Teramoto ORCID ; Dominic Gerlach ORCID ; Peng Shen ORCID ; Shigenori Ueda SAMURAI ORCID ; Takako Kimura ORCID ; Christian Dussarrat ORCID ; Toyohiro Chikyow SAMURAI ORCID
Keyword
gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
Date published
2025-03-07
Updated at
2025-03-26 17:26:31 +0900
Physica Rapid Research Ltrs - 2024 - Kano - Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution.pdf
Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN
Article
Creator
Emi Kano ORCID ; Jun Uzuhashi SAMURAI ORCID ; Koki Kobayashi ; Kosuke Ishikawa ; Kyosuke Sawabe ; Tetsuo Narita ; Kacper Sierakowski ; Michal Bockowski ; Tadakatsu Ohkubo SAMURAI ORCID ; Tetsu Kachi ; Nobuyuki Ikarashi ORCID
Keyword
gallium nitride, atom probe tomography, transmission electron microscopy
Date published
2024-04-22
Updated at
2024-09-20 16:30:27 +0900
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer.pdf
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer
Article
Creator
Jun Uzuhashi SAMURAI ORCID ; Jun Chen SAMURAI ORCID ; Ryo Tanaka ; Shinya Takashima ; Masaharu Edo ; Tadakatsu Ohkubo SAMURAI ORCID ; Takashi Sekiguchi
Keyword
gallium nitride, atom probe tomography, transmission electron microscopy, cathodoluminescence
Date published
2024-08-07
Updated at
2024-08-03 08:30:15 +0900
Vacancy-type defects and their trapping-detrapping of charge carriers in ion-implanted GaN studied by positron annihilation.pdf
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
Article
Creator
Akira Uedono ORCID ; Ryo Tanaka ORCID ; Shinya Takashima ORCID ; Katsunori Ueno ; Masaharu Edo ; Kohei Shima ORCID ; Shigefusa F. Chichibu ORCID ; Jun Uzuhashi SAMURAI ORCID ; Tadakatsu Ohkubo SAMURAI ORCID ; Shoji Ishibashi ORCID ; Kacper Sierakowski ORCID ; Michal Bockowski ORCID
Keyword
gallium nitride
Date published
2024-02-29
Updated at
2025-03-01 12:30:45 +0900
Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs.pdf
Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
Proceedings
Creator
Ryo Tanaka ; Shinya Takashima ; Katsunori Ueno ; Masahiro Horita ; Jun Suda ; Jun Uzuhashi SAMURAI ORCID ; Tadakatsu Ohkubo SAMURAI ORCID ; Masaharu Edo
Keyword
gallium nitride, atom probe tomography, transmission electron microscopy
Date published
2023-06-08
Updated at
2024-04-19 12:30:23 +0900
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation.pdf
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
Article
Creator
Emi Kano ; Keita Kataoka ; Jun Uzuhashi SAMURAI ORCID ; Kenta Chokawa ; Hideki Sakurai ; Akira Uedono ; Tetsuo Narita ; Kacper Sierakowski ; Michal Bockowski ; Ritsuo Otsuki ; Koki Kobayashi ; Yuta Itoh ; Masahiro Nagao ; Tadakatsu Ohkubo SAMURAI ORCID ; Kazuhiro Hono SAMURAI ORCID ; Jun Suda ; Tetsu Kachi ; Nobuyuki Ikarashi
Keyword
gallium nitride, transmission electron microscopy, atom probe tomography
Date published
2022-08-14
Updated at
2024-01-05 22:13:58 +0900
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam.pdf
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
Article
Creator
Akira Uedono ; Hideki Sakurai ; Jun Uzuhashi SAMURAI ORCID ; Tetsuo Narita ; Kacper Sierakowski ; Shoji Ishibashi ; Shigefusa F. Chichibu ; Michal Bockowski ; Jun Suda ; Tadakatsu Ohokubo ; Nobuyuki Ikarashi ; Kazuhiro Hono SAMURAI ORCID ; Tetsu Kachi
Keyword
gallium nitride, vacancy, positron
Date published
2023-03-15
Updated at
2024-01-05 22:12:35 +0900
Acceptor activation of Mg-doped GaN – Effects of N2-O2 vs N2 as ambient gas during annealing.pdf
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
Article
Creator
Ashutosh Kumar ORCID ; Martin Berg ; Qin Wang ; Jun Uzuhashi SAMURAI ORCID ; Tadakatsu Ohkubo SAMURAI ORCID ; Michael Salter ; Peter Ramvall
Keyword
gallium nitride, scanning transmission electron microscopy, semiconductor, activation
Date published
2023-07-21
Updated at
2024-01-05 22:12:15 +0900