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Annealing behaviors of vacancy-type defects in Mg and N-implanted GaN were studied by positron annihilation. The major defect species in as-implanted samples was identified as Ga-vacancy (VGa)-type defects. For Mg-implanted GaN with sequential N-implantation after annealing above 1000°C, the defect species were vacancy clusters such as (VGaVN)3. Due to the downward shift of the Fermi level position resulting from a partial activation of Mg, the charge states of defects tended to become positive. For N-implanted GaN, the size of the vacancy clusters started to decrease above 1200°C annealing, which was attributed to recombinations between N-vacancies coupled with VGas and excess N atoms. The impact of sequential N-implantations on vacancies in Mg-implanted GaN was studied, and its effect was most effective when the ratio of the concentration of N to that of Mg was three.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: gallium nitride

刊行年月日: 2025-08-27

出版者: Institute of Electrical and Electronics Engineers (IEEE)

掲載誌:

• IEEE Journal of the Electron Devices Society (ISSN: 21686734) vol. 13 p. 1252-1257

研究助成金:

• NEDO Program for Cross-Ministerial Strategic Innovation Promotion
• MEXT Program for Research and Development of Next-Generation Semiconductor to Realize Energy-Saving Society JPJ005357
• MEXT Program for Creation of Innovative Core Technology for Power Electronics JPJ009777
• JSPS KAKENHI 21H01826
• Polish National Centre for Research and Development TECHMATSTRATEG-III/0003/2019-00
• Polish National Science Centre 2018/29/B/ST5/00338

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6097

公開URL: https://doi.org/10.1109/jeds.2025.3603203

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更新時刻: 2026-01-05 13:57:59 +0900

MDRでの公開時刻: 2026-01-05 16:20:04 +0900