論文 Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN

Emi Kano ORCID ; Jun Uzuhashi SAMURAI ORCID (National Institute for Materials Science) ; Koki Kobayashi ; Kosuke Ishikawa ; Kyosuke Sawabe ; Tetsuo Narita ; Kacper Sierakowski ; Michal Bockowski ; Tadakatsu Ohkubo SAMURAI ORCID (National Institute for Materials Science) ; Tetsu Kachi ; Nobuyuki Ikarashi ORCID

Physica Rapid Research Ltrs - 2024 - Kano - Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution.pdf
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Emi Kano, Jun Uzuhashi, Koki Kobayashi, Kosuke Ishikawa, Kyosuke Sawabe, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Tadakatsu Ohkubo, Tetsu Kachi, Nobuyuki Ikarashi. Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN. physica status solidi (RRL) – Rapid Research Letters. 2024, 18 (9), 2400074. https://doi.org/10.1002/pssr.202400074
SAMURAI

説明:

(abstract)

In Mg ion implantation doping of GaN, sequential N ion implantation reportedly changes Mg concentrations in the Mg ion-implanted region and the underlying region after activation annealing. Our atomic-resolution analyses showed that, in the Mg ion-implanted region, the N ion implantation increases the concentration of MgGa. The rest of the Mg atoms agglomerated to form clusters on the extended defects, and its concentration was also increased by the N implantation. The N implantation affected the coarsening of the defects, which cause Mg cluster formation.

権利情報:

キーワード: gallium nitride, atom probe tomography, transmission electron microscopy

刊行年月日: 2024-04-22

出版者: Wiley

掲載誌:

  • physica status solidi (RRL) – Rapid Research Letters (ISSN: 18626254) vol. 18 issue. 9 2400074

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/pssr.202400074

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更新時刻: 2024-09-20 16:30:27 +0900

MDRでの公開時刻: 2024-09-20 16:30:27 +0900

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