Emi Kano
;
Jun Uzuhashi
(National Institute for Materials Science)
;
Koki Kobayashi
;
Kosuke Ishikawa
;
Kyosuke Sawabe
;
Tetsuo Narita
;
Kacper Sierakowski
;
Michal Bockowski
;
Tadakatsu Ohkubo
(National Institute for Materials Science)
;
Tetsu Kachi
;
Nobuyuki Ikarashi
Description:
(abstract)In Mg ion implantation doping of GaN, sequential N ion implantation reportedly changes Mg concentrations in the Mg ion-implanted region and the underlying region after activation annealing. Our atomic-resolution analyses showed that, in the Mg ion-implanted region, the N ion implantation increases the concentration of MgGa. The rest of the Mg atoms agglomerated to form clusters on the extended defects, and its concentration was also increased by the N implantation. The N implantation affected the coarsening of the defects, which cause Mg cluster formation.
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Keyword: gallium nitride, atom probe tomography, transmission electron microscopy
Date published: 2024-04-22
Publisher: Wiley
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1002/pssr.202400074
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Updated at: 2024-09-20 16:30:27 +0900
Published on MDR: 2024-09-20 16:30:27 +0900
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Physica Rapid Research Ltrs - 2024 - Kano - Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution.pdf
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