プロシーディングス Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs

Ryo Tanaka (Fuji Electric Co., Ltd.) ; Shinya Takashima (Fuji Electric Co., Ltd.) ; Katsunori Ueno (Fuji Electric Co., Ltd.) ; Masahiro Horita (Nagoya Univ.) ; Jun Suda (Nagoya Univ.) ; Jun Uzuhashi SAMURAI ORCID (National Institute for Materials ScienceROR) ; Tadakatsu Ohkubo SAMURAI ORCID (National Institute for Materials ScienceROR) ; Masaharu Edo (Fuji Electric Co., Ltd.)

Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs.pdf
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Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masahiro Horita, Jun Suda, Jun Uzuhashi, Tadakatsu Ohkubo, Masaharu Edo. Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs. https://doi.org/10.23919/IWJT59028.2023.10175173
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説明:

(abstract)

GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS gate driving are preferable for high-power switching applications. Due to recent advances in bulk GaN crystal growth, more studies are reporting vertical-type GaN devices with a breakdown voltage exceeding 1 kV on GaN substrates. However, these reports use an epitaxially grown p-type layer or fin-structure.

権利情報:

キーワード: gallium nitride, atom probe tomography, transmission electron microscopy

刊行年月日: 2023-06-08

出版者: IEEE

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原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.4485

公開URL: https://doi.org/10.23919/IWJT59028.2023.10175173

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更新時刻: 2024-04-19 12:30:23 +0900

MDRでの公開時刻: 2024-04-19 12:30:23 +0900

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