Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs

Ryo Tanaka; Shinya Takashima; Katsunori Ueno; Masahiro Horita; Jun Suda; Jun Uzuhashi; Tadakatsu Ohkubo; Masaharu Edo

doi:10.23919/IWJT59028.2023.10175173

プロシーディングス論文 Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs

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Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masahiro Horita, Jun Suda, Jun Uzuhashi, Tadakatsu Ohkubo, Masaharu Edo. Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs. https://doi.org/10.23919/IWJT59028.2023.10175173

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(abstract)

GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS gate driving are preferable for high-power switching applications. Due to recent advances in bulk GaN crystal growth, more studies are reporting vertical-type GaN devices with a breakdown voltage exceeding 1 kV on GaN substrates. However, these reports use an epitaxially grown p-type layer or fin-structure.

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Creative Commons BY Attribution 4.0 International

キーワード: gallium nitride, atom probe tomography, transmission electron microscopy

刊行年月日: 2023-06-08

出版者: IEEE

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原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.4485

公開URL: https://doi.org/10.23919/IWJT59028.2023.10175173

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更新時刻: 2024-04-19 12:30:23 +0900

MDRでの公開時刻: 2024-04-19 12:30:23 +0900

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