Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs

Ryo Tanaka; Shinya Takashima; Katsunori Ueno; Masahiro Horita; Jun Suda; Jun Uzuhashi; Tadakatsu Ohkubo; Masaharu Edo

doi:10.23919/IWJT59028.2023.10175173

Conference paper Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs

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Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masahiro Horita, Jun Suda, Jun Uzuhashi, Tadakatsu Ohkubo, Masaharu Edo. Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs. https://doi.org/10.23919/IWJT59028.2023.10175173

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GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS gate driving are preferable for high-power switching applications. Due to recent advances in bulk GaN crystal growth, more studies are reporting vertical-type GaN devices with a breakdown voltage exceeding 1 kV on GaN substrates. However, these reports use an epitaxially grown p-type layer or fin-structure.

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