Download file (692KB)
Download as zip (675KB)

コレクション

引用

説明:

Annealing behaviors of vacancy-type defects in ion-implanted GaN were studied by positron annihilation. For as-implanted samples, the major defect species was identified as VGa-type defects. For N-implanted GaN, the size of the vacancies increased as the annealing temperature increased up to 1100°C and then shrunk above 1200°C. This behavior was attributed to recombinations between VN-type defects and excess N. For Mg-implanted GaN with N-implantation, the major defect species after annealing above 1000°C was vacancy clusters such as (VGaVN)3. Positively charged vacancy clusters were formed after annealing above 1000°C, and they have more VN than neutral or negatively charged clusters. After annealing at 1400°C, the major secondary defects were nano-scale intrinsic defects and collapsed vacancy disks forming intrinsic dislocation loops, and the formation of the latter defects was suppressed in N-implanted GaN.

権利情報:

• In Copyright
  

  © 2025 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

キーワード: gallium nitride

刊行年月日: 2025-06-04

出版者: IEEE

掲載誌:

• 2025 22nd International Workshop on Junction Technology (IWJT) (ISSN: 27682153) p. 79-82

会議:

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5766

公開URL: https://doi.org/10.23919/iwjt66253.2025.11072893

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-09-17 16:30:20 +0900

MDRでの公開時刻: 2025-09-17 16:19:23 +0900