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Annealing behaviors of vacancy-type defects in ion-implanted GaN were studied by positron annihilation. For as-implanted samples, the major defect species was identified as VGa-type defects. For N-implanted GaN, the size of the vacancies increased as the annealing temperature increased up to 1100°C and then shrunk above 1200°C. This behavior was attributed to recombinations between VN-type defects and excess N. For Mg-implanted GaN with N-implantation, the major defect species after annealing above 1000°C was vacancy clusters such as (VGaVN)3. Positively charged vacancy clusters were formed after annealing above 1000°C, and they have more VN than neutral or negatively charged clusters. After annealing at 1400°C, the major secondary defects were nano-scale intrinsic defects and collapsed vacancy disks forming intrinsic dislocation loops, and the formation of the latter defects was suppressed in N-implanted GaN.

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Keyword: gallium nitride

Date published: 2025-06-04

Publisher: IEEE

Journal:

• 2025 22nd International Workshop on Junction Technology (IWJT) (ISSN: 27682153) p. 79-82

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Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5766

First published URL: https://doi.org/10.23919/iwjt66253.2025.11072893

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Updated at: 2025-09-17 16:30:20 +0900

Published on MDR: 2025-09-17 16:19:23 +0900