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Annealing behaviors of vacancy-type defects in ion-implanted GaN were studied by positron annihilation. Mg+ and N+ ions were implanted to obtain 700-nm-deep box profiles with Mg and N concentrations of 1 x 1018 cm-3, and the samples were annealed using an ultra-high pressure annealing system. For as-implanted samples, the major defect species was identified as Ga-vacancy (VGa)-type defects. For N-implanted GaN, the size of the vacancy-type defects increased as the annealing temperature increased up to 1100°C and then started to shrink above 1200°C. This annealing behavior was attributed to recombinations between N-vacancy (VN)-type defects and excess N atoms. For Mg-implanted GaN, the major defect species after annealing above 1000°C was vacancy clusters such as (VGaVN)3. Some of them acted as nonradiative recombination centers for blue and ultraviolet luminescence at room temperature. Their energy levels corresponding to the transition from positive to neutral were located between 2.6 eV above the valence band maximum and the conduction band minimum. The thermal activation process of electron detrapping from the vacancy clusters was also studied. For Mg-implanted GaN, one of the major secondary defects was collapsed vacancy disks forming intrinsic dislocation loops. They were eliminated by additional N-implantation, which was associated with vacancy agglomerations under the annealing in VGa-rich condition.

権利情報:

• In Copyright
  This is the peer reviewed version of the following article: Vacancy-Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion-Implanted GaN Studied by Positron Annihilation, which has been published in final form at https://doi.org/10.1002/pssb.202400060. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.

キーワード: gallium nitride

刊行年月日: 2024-02-29

出版者: Wiley

掲載誌:

• physica status solidi (b) (ISSN: 03701972) vol. 261 issue. 5 2400060

研究助成金:

• New Energy and Industrial Technology Development Organization JPJ005357
• Ministry of Education, Culture, Sports, Science and Technology JPJ009777

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4498

公開URL: https://doi.org/10.1002/pssb.202400060

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更新時刻: 2025-03-01 12:30:45 +0900

MDRでの公開時刻: 2025-03-01 12:30:46 +0900