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The p-type doping of GaN using Mg ion implantation remains a critical challenge in the development of GaN power devices. Herein, we demonstrate that Mg clustering, induced by sequential N ion implantation, impacts acceptor concentration (Na), compensating donor concentration (Nd), and acceptor activation energy (ΔEa). N was implanted at the same concentration as Mg to suppress Mg diffusion. Hall-effect measurements indicated that, for Mg doses above 1×1019 cm−3, Na reached a plateau whereas Nd continued to increase. Consequently, the net acceptor concentration (Na − Nd) reached a maximum of 4×1018 cm−3 at a Mg dose of 1×1019 cm−3. ΔEa decreased with increasing Mg dose. Atomic-resolution structural analyses revealed that nanoscale defects generated by N implantation induced Mg clustering around these defects, with the cluster density increasing with Mg dose. Notably, peak Mg concentrations within these clusters exceeded 1×1021 cm−3 and increased with Mg dose, whereas Mg atoms outside these clusters remained uniformly dispersed in the range 1.3−1.5×1018 cm−3 regardless of Mg dose. These findings suggest that the increase in Na up to a Mg dose of 1×1019 cm−3 can be attributed to the Mg atoms within these Mg-rich clusters acting as acceptors, which also lowered ΔEa. Conversely, Mg atoms at or near the peak Mg-concentration sites likely acted as compensating donors, contributing to the increase in Nd with increasing Mg dose. These findings elucidate the impact of Mg clustering induced by nanoscale implantation defects on the p-type conductivity of GaN, providing insight for improving ion-implantation doping strategies in GaN.

権利情報:

• In Copyright
  

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Kosuke Ishikawa, Emi Kano, Jun Uzuhashi, Kensuke Sumida, Tetsuo Narita, Masahiro Horita, Junya Sahashi, Shun Lu, Jun Suda, Tadakatsu Ohkubo, Tetsu Kachi, Nobuyuki Ikarashi; Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN. Appl. Phys. Lett. 22 June 2026; 128 (25): 252102 and may be found at https://doi.org/10.1063/5.0335166.

キーワード: gallium nitride, atom probe tomography

刊行年月日: 2026-06-22

出版者: AIP Publishing

掲載誌:

• Applied Physics Letters (ISSN: 00036951) vol. 128 issue. 25 252102

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology JPJ009777

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6368

公開URL: https://doi.org/10.1063/5.0335166

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更新時刻: 2026-06-25 09:46:49 +0900

MDRでの公開時刻: 2026-06-25 12:26:56 +0900