Download file (2.51MB)
Download as zip (2.03MB)

コレクション

引用

説明:

The effects of nitrosyl fluoride (FNO) gas treatment on the surface of GaN(0001) and its interface with sputtered Pt were investigated by hard x-ray photoelectron spectroscopy (HAXPES). Annealing GaN and Pt/GaN samples in an FNO gas atmosphere resulted in the appearance of prominent F 1s peaks in the HAXPES spectra, indicating the efficient formation of Ga–Fx bonding states not only in bare-GaN but also in Pt/GaN, even when the FNO gas treatment was performed after Pt deposition. In addition, the chemical shifts of the Ga 2p3/2 and N 1s peaks corresponded to a Fermi level shift toward the valence band. The FNO gas treatment induced greater oxidation of the GaN surface than the Pt/GaN interface. By contrast, at the Pt/GaN interface, the unintentionally formed oxide GaOx was reduced, resulting in an improvement of the electrical properties. The results of this study suggest that FNO gas treatment is an effective post-processing method for the fluorination of GaN-based systems after metal deposition.

権利情報:

• Creative Commons BY-NC Attribution-NonCommercial 4.0 International
  

キーワード: gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination

刊行年月日: 2025-03-07

出版者: AIP Publishing

掲載誌:

• Journal of Applied Physics (ISSN: 00218979) vol. 137 issue. 9

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0224068

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-03-26 17:26:31 +0900

MDRでの公開時刻: 2025-03-26 17:26:31 +0900