論文 Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer

Jun Uzuhashi SAMURAI ORCID (Research Center for Magnetic and Spintronic Materials/Administrative Office, National Institute for Materials ScienceROR) ; Jun Chen SAMURAI ORCID (Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Defect Design Group, National Institute for Materials ScienceROR) ; Ryo Tanaka (Fuji Electric Corporation) ; Shinya Takashima (Fuji Electric Corporation) ; Masaharu Edo (Fuji Electric Corporation) ; Tadakatsu Ohkubo SAMURAI ORCID (Research Center for Magnetic and Spintronic Materials, National Institute for Materials ScienceROR) ; Takashi Sekiguchi (University of Tsukuba)

Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer.pdf
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Jun Uzuhashi, Jun Chen, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Tadakatsu Ohkubo, Takashi Sekiguchi. Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer. JOURNAL OF APPLIED PHYSICS. 2024, 136 (5), 055702. https://doi.org/10.1063/5.0216601
SAMURAI

説明:

(abstract)

An area selectable Mg doping via ion implantation (I/I) is essential to realize gallium nitride (GaN) based power switching devices. Conventional post-implantation annealing forms considerable defects in the GaN, resulting in extremely low activation efficiency. The recent invention of ultra-high-pressure annealing (UHPA) has substantially improved the p-type activation efficiency, however, the UHPA causes an unexpected Mg diffusion. Thus, both annealing processes resulted in a much lower Mg concentration in the GaN matrix than the Mg dose. In this study, the effect of a sequential N I/I for p-type Mg-implanted GaN was investigated by the correlative scanning transmission electron microscopy (STEM), atom probe tomography (APT), and cathodoluminescence (CL) analyses. APT results have revealed that the sequential N I/I can successfully maintain the Mg concentration in the GaN matrix in the higher range of 1018 cm-3 or more. Our investigation suggests that sequential N I/I is a promising technique to maintain the Mg concentration higher and improve the p-type activation efficiency.

権利情報:

  • In Copyright
    This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Jun Uzuhashi, Jun Chen, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Tadakatsu Ohkubo, Takashi Sekiguchi; Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer. J. Appl. Phys. 7 August 2024; 136 (5): 055702. and may be found at https://doi.org/10.1063/5.0216601

キーワード: gallium nitride, atom probe tomography, transmission electron microscopy, cathodoluminescence

刊行年月日: 2024-08-07

出版者: American Institute of Physics

掲載誌:

  • JOURNAL OF APPLIED PHYSICS (ISSN: 10897550) vol. 136 issue. 5 055702

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4619

公開URL: https://doi.org/10.1063/5.0216601

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更新時刻: 2024-08-03 08:30:15 +0900

MDRでの公開時刻: 2024-08-03 08:30:15 +0900

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