Article Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer

Jun Uzuhashi SAMURAI ORCID (Research Center for Magnetic and Spintronic Materials/Administrative Office, National Institute for Materials ScienceROR) ; Jun Chen SAMURAI ORCID (Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Defect Design Group, National Institute for Materials ScienceROR) ; Ryo Tanaka (Fuji Electric Corporation) ; Shinya Takashima (Fuji Electric Corporation) ; Masaharu Edo (Fuji Electric Corporation) ; Tadakatsu Ohkubo SAMURAI ORCID (Research Center for Magnetic and Spintronic Materials, National Institute for Materials ScienceROR) ; Takashi Sekiguchi (University of Tsukuba)

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Jun Uzuhashi, Jun Chen, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Tadakatsu Ohkubo, Takashi Sekiguchi. Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer. JOURNAL OF APPLIED PHYSICS. 2024, 136 (5), 055702. https://doi.org/10.1063/5.0216601
SAMURAI

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(abstract)

An area selectable Mg doping via ion implantation (I/I) is essential to realize gallium nitride (GaN) based power switching devices. Conventional post-implantation annealing forms considerable defects in the GaN, resulting in extremely low activation efficiency. The recent invention of ultra-high-pressure annealing (UHPA) has substantially improved the p-type activation efficiency, however, the UHPA causes an unexpected Mg diffusion. Thus, both annealing processes resulted in a much lower Mg concentration in the GaN matrix than the Mg dose. In this study, the effect of a sequential N I/I for p-type Mg-implanted GaN was investigated by the correlative scanning transmission electron microscopy (STEM), atom probe tomography (APT), and cathodoluminescence (CL) analyses. APT results have revealed that the sequential N I/I can successfully maintain the Mg concentration in the GaN matrix in the higher range of 1018 cm-3 or more. Our investigation suggests that sequential N I/I is a promising technique to maintain the Mg concentration higher and improve the p-type activation efficiency.

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    This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Jun Uzuhashi, Jun Chen, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Tadakatsu Ohkubo, Takashi Sekiguchi; Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer. J. Appl. Phys. 7 August 2024; 136 (5): 055702. and may be found at https://doi.org/10.1063/5.0216601

Keyword: gallium nitride, atom probe tomography, transmission electron microscopy, cathodoluminescence

Date published: 2024-08-07

Publisher: American Institute of Physics

Journal:

  • JOURNAL OF APPLIED PHYSICS (ISSN: 10897550) vol. 136 issue. 5 055702

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Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4619

First published URL: https://doi.org/10.1063/5.0216601

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Updated at: 2024-08-03 08:30:15 +0900

Published on MDR: 2024-08-03 08:30:15 +0900

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