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Structure prediction of boron-doped graphene by machine learning
Coalescence delay of microbubbles on superhydrophobic/superhydrophilic surfaces underw...
Combination of recommender system and single-particle diagnosis for accelerated discov...
Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electro...
Evaluation of dielectric function models for calculation of electron inelastic mean fr...
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
Sorption-induced static mode nanomechanical sensing with viscoelastic receptor layers ...
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annea...
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implante...
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Fast electron damage mechanism of epoxy resin studied by electron energy loss spectros...
Observation of charge-to-spin conversion with giant efficiency at Ni0.8Fe0.2/Bi2WO6 in...
631% room temperature tunnel magnetoresistance with large oscillation effect in CoFe/M...
Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepa...
Gate-modulated reflectance spectroscopy for detecting excitonic states in two-dimensio...
Improvement of magnetic field detectivity in electrical 1/f noise-dominated tunnel mag...
Permanent-magnet-based transverse thermoelectric generator with high fill factor drive...
Materials issues and devices of α- and β-Ga2O3
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3...
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10...
Perspective on nanoscale magnetic sensors using giant anomalous Hall effect in topolog...
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with ...
Optimum asymmetry for nanofabricated refractometric sensors at quasi-bound states in t...
Study of device characteristics of intrinsic Josephson junction terahertz emitters rel...
Enhanced orbital torque efficiency in nonequilibrium Ru50Mo50(0001) alloy epitaxial th...
Zero-magnetic-field operation of ordinary-Nernst-effect-based transverse thermoelectri...
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HVPE
4
Ga2O3
3
gallium nitride
3
α-Ga2O3
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ELO
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English
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AIP Publishing
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
15
In Copyright
14
Material/Specimen
nitrides
1
Date
2018
2
Author
Yuichi Oshima
6
Tadakatsu Ohkubo
5
Jun Uzuhashi
4
Ashutosh Kumar
2
Elaheh Ahmadi
2
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http://rightsstatements.org/vocab/InC/1.0/
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1
Funder
Japan Society for the Promotion of Science
3
Core Research for Evolutional Science and Technology
2
Ministry of Education, Culture, Sports, Science and Technology
2
ACT-X
1
Cabinet Office, Government of Japan
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Journal
JOURNAL OF APPLIED PHYSICS
10
APPLIED PHYSICS LETTERS
5
APL Materials
4
Applied Physics Letters
4
The Journal of Chemical Physics
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