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631% room temperature tunnel magnetoresistance with large oscillation effect in CoFe/MgO/CoFe(001) junctions
We demonstrate tunnel magnetoresistance (TMR) ratios of up to 631% at room temperature (RT) using CoFe/MgO/CoFe(001) epitaxial magnetic tunnel junctions (MTJs). The TMR ratio increased up to 1143% at 10 K. The large TMR ratios resulted from the fine-tuning of the atomic-scale structures of the MTJs, such as crystallographic orientations and MgO interface oxidation, which are expected to enhance the well-known Δ1 coherent tunneling transport. Interestingly, the TMR oscillation effect, which is not covered by the standard coherent tunneling theory, also became significant. A 0.32-nm period TMR oscillation with increasing MgO thickness dominates the transport in a wide range of MgO thicknesses; the peak-to-valley difference of the TMR oscillation exceeds 140% at RT, which is attributed to the appearance of large oscillatory components in the resistance area product.
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- 15/03/2023
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126-Appl. Phys. Lett. 122, 112404 (2023)-Scheike.pdf | 2.27 MB | MDR Open |
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