Materials issues and devices of α- and β-Ga2O3

First published at

• https://doi.org/10.1063/1.5123213

Creator

• Name

  Elaheh Ahmadi

  Role

  author

  Name

  Yuichi Oshima

  ORCID

  https://orcid.org/0000-0001-8293-4891

  Organization

  National Institute for Materials Science

  Role

  author

Keyword

• Ga2O3
• epitaxy
• power device

Resource type

• Article

Publisher

• AIP Publishing

Date published

• 30/10/2019

Rights statement

• In Copyright

Journal

• Title

  JOURNAL OF APPLIED PHYSICS

  ISSN

  00218979

  Volume

  126

  Issue

  16

  Start page

  160901

  End page

  160901

Manuscript type

• Version of record (Published version)

Language

• English

Last modified

• 01/02/2024

Additional metadata

• Rights description

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Elaheh Ahmadi et al., J. Appl. Phys. 126, 160901 (2019) and may be found at https://doi.org/10.1063/1.5123213.

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