Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

DOI

• https://doi.org/10.48505/nims.4444

First published at

• https://doi.org/10.1063/5.0198160

Creator

• Name

  Yuhua Tsai

  ORCID

  https://orcid.org/0000-0001-7996-6681

  Organization

  National Institute for Materials Science

  Role

  author

  Name

  Masaaki Kobata

  ORCID

  https://orcid.org/0000-0002-9710-6308

  Role

  author

  Name

  Tatsuo Fukuda

  ORCID

  https://orcid.org/0000-0002-4832-5862

  Role

  author

  Name

  Hajime Tanida

  ORCID

  https://orcid.org/0009-0002-8468-7315

  Role

  author

  Name

  Toru Kobayashi

  Role

  author

  Name

  Yoshiyuki Yamashita

  ORCID

  https://orcid.org/0000-0003-0994-8095

  Organization

  National Institute for Materials Science

  Role

  author

Keyword

• Ga2O3
• b-Ga2O3
• dopant

Resource type

• Article

Publisher

• AIP Publishing

Date published

• 14/03/2024

Rights statement

• In Copyright

License description

Journal

• Title

  Applied Physics Letters

  ISSN

  00036951

  Volume

  124

  Issue

  11

Manuscript type

• Accepted manuscript

Language

• English

Funding reference

• Funder identifier

  2023B-E09

  Funder name

  Japan Atomic Energy Agency

  Funder identifier

  JPMXP1223AE0025

  Funder name

  Ministry of Education, Culture, Sports, Science and Technology

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