Publication
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
MDR Open Deposited
In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The etching was done selectively in window areas to form holes or trenches with inner sidewalls of (100) and/or {310} facets, which are the smallest surface-energy-density plane and oxygen-close-packed slip planes, respectively. In particular, (100) faceted sidewalls were flat and relatively close to the substrate surface normal. Therefore, this simple dry etching method is promising for fabricating plasma-damage-free trenches and fins used for b-Ga2O3-based power devices.
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- 17/04/2023
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- Accepted manuscript
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- 27/11/2023
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Supplementary_material.pdf | 2.53 MB | MDR Open |
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T. Oshima_Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas.docx | 9.17 MB | MDR Open |
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