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Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
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The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and b-Ga2O3 (-201) using gallium chloride and oxygen as precursors. X-ray omega-2theta and pole figure measurements reveal that the films on GaN (0001) and AlN (0001) are single-crystalline (0001) e-Ga2O3, while a c-plane e-Ga2O3 film grown on b-Ga2O3 (-201) exhibits additional misoriented domains. High temperature X-ray diffraction measurement reveals that the e-Ga2O3 films are stable up to approximately 700℃. The optical bandgap of e-Ga2O3 is determined from the transmittance spectrum to be 4.9 eV.
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- 24/08/2015
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- 01/02/2024
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Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor.pdf | 1.69 MB | MDR Open |
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