16 件のレコードが見つかりました。
Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH)
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, TMAH, wet etching, MEMS
- 刊行年月日
- 2025-11-01
- 更新時刻
- 2025-11-27 08:30:13 +0900
Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
- ジャーナル論文
- 著者
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;Yuji Kato (author) (この著者で検索)Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
Yoshiko Nakayama (author) (この著者で検索)National Institute for Materials Science
;
Masaki Takeguchi (author) (この著者で検索)National Institute for Materials Science
;
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, Superlattice
- 刊行年月日
- 2019-06-01
- 更新時刻
- 2024-01-05 22:11:34 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
- キーワード
- Ga2O3, (-102), selective area growth, selective area etching
- 刊行年月日
- 2024-01-22
- 更新時刻
- 2025-01-25 12:30:12 +0900
Materials issues and devices of α- and β-Ga2O3
- ジャーナル論文
- 著者
-
;Elaheh Ahmadi (author) (この著者で検索)Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, power device, epitaxy
- 刊行年月日
- 2019-10-28
- 更新時刻
- 2024-01-29 15:08:11 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- ジャーナル論文
- 著者
-
Yuichi Oshima (author) (この著者で検索)
;
Takayoshi Oshima (author) (この著者で検索)
;
Shiyu Xiao (author) (この著者で検索)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (この著者で検索);Katsuhiro Imai (author) (この著者で検索)Takahiro Tomita (author) (この著者で検索) - キーワード
- Ga2O3, HVPE, Cr2O3
- 刊行年月日
- 2026-02-21
- 更新時刻
- 2026-02-18 16:30:15 +0900
Luminescence properties of dislocations in α-Ga2O3
- ジャーナル論文
- 著者
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Mugove Maruzane (author) (この著者で検索)
https://orcid.org/0009-0004-9207-0424
(unauthenticated)
;
Yuichi Oshima (author) (この著者で検索)
;
Olha Makydonska (author) (この著者で検索)
https://orcid.org/0009-0008-5562-2137
(unauthenticated)
;
Paul R Edwards (author) (この著者で検索)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Robert W Martin (author) (この著者で検索)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C-P Massabuau (author) (この著者で検索)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- キーワード
- Ga2O3, dislocation
- 刊行年月日
- 2025-01-20
- 更新時刻
- 2024-11-13 08:31:40 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- ジャーナル論文
- 著者
-
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
Takashi Shinohe (author) (この著者で検索)FLOSFIA INC.
- キーワード
- Ga2O3, dislocation, HVPE, ELO
- 刊行年月日
- 2025-05-19
- 更新時刻
- 2025-05-21 16:30:09 +0900
Step-and-terrace surface formation on (001) β-Ga2O3 by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, TMAH, Wet etching
- 刊行年月日
- 2025-08-01
- 更新時刻
- 2025-08-18 16:30:36 +0900
Epitaxial relationship of NiO on (-102) β-Ga2O3
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Shinji Nakagomi (author) (この著者で検索)Ishinomaki Senshu University Faculty of Science and Engineering
- キーワード
- Ga2O3, NiO, epitaxial relationship
- 刊行年月日
- 2023-12-01
- 更新時刻
- 2024-11-23 16:30:35 +0900