Reducing vertex radius of curvature for 100 nm size square and triangular holes in GaN by shape modification
- ジャーナル論文
- 著者
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;Kohei Tuzuku (author) (この著者で検索)Masataka Imura (author) (この著者で検索)
;
Hironori Okumura (author) (この著者で検索)
https://orcid.org/0000-0002-5464-9169
(unauthenticated)
- キーワード
- GaN, EB lithography
- 刊行年月日
- 2025-06-01
- 更新時刻
- 2025-12-26 10:20:58 +0900
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
- ジャーナル論文
- 著者
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Yoshihiro Irokawa (author) (この著者で検索)
;
Mamoru Usami (author) (この著者で検索)
https://orcid.org/0009-0002-3188-7380
(unauthenticated)
;
Jun Uzuhashi (author) (この著者で検索)
;
Tadakatsu Ohkubo (author) (この著者で検索)
;
Toshihide Nabatame (author) (この著者で検索)
;
Yasuo Koide (author) (この著者で検索)
- キーワード
- GaN
- 刊行年月日
- 2026-05-01
- 更新時刻
- 2026-05-13 10:14:20 +0900
Continuous real-time O 1s core XPS spectra of initial O2 molecule adsorption on polar and m-plane surfaces of GaN
- データセット
- 著者
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SUMIYA, Masatomo (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, Gallium nitride, Oxidation, Adsorption, XPS, SPring-8
- 刊行年月日
- 2020-11-19
- 更新時刻
- 2024-01-05 22:13:22 +0900
Vacancy-type defects introduced by mechanical polishing in ammonothermal GaN studied by a monoenergetic positron beam
- ジャーナル論文
- 著者
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Akira Uedono (author) (この著者で検索)
https://orcid.org/0000-0001-6224-4869
(unauthenticated)
;
Shoji Ishibashi (author) (この著者で検索)
https://orcid.org/0000-0002-4896-3530
(unauthenticated)
;
Kohei Shima (author) (この著者で検索)
https://orcid.org/0000-0003-0967-141X
(unauthenticated)
;
;Shigefusa F. Chichibu (author) (この著者で検索)Kacper Sierakowski (author) (この著者で検索)
https://orcid.org/0000-0002-9447-1182
(unauthenticated)
;
Makoto Oishi (author) (この著者で検索)
https://orcid.org/0000-0003-3402-4556
(unauthenticated)
;
Noriyuki Okada (author) (この著者で検索)
https://orcid.org/0009-0002-0090-5646
(unauthenticated)
;
Takuro Nagai (author) (この著者で検索)
;
Michal Bockowski (author) (この著者で検索)
https://orcid.org/0000-0003-1616-685X
(unauthenticated)
- キーワード
- Mechanical polishing, GaN, Vacancy, Defect, Positron annihilation
- 刊行年月日
- 2026-04-12
- 更新時刻
- 2026-04-20 08:56:29 +0900
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
Masataka Imura (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
- キーワード
- GaN, AlInN, etching, positive bevel edge termination
- 刊行年月日
- 2024-08-01
- 更新時刻
- 2024-08-02 12:30:52 +0900
Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
- ジャーナル論文
- 著者
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T. Hamachi (author) (この著者で検索)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
;
T. Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Y. Hayashi (author) (この著者で検索)
;
S. Usami (author) (この著者で検索)
https://orcid.org/0000-0002-9710-1718
(unauthenticated)
;
;M. Imanishi (author) (この著者で検索);Y. Mori (author) (この著者で検索);K. Sumitani (author) (この著者で検索)Y. Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
S. Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
A. Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, Dislocation, SPring-8
- 刊行年月日
- 2024-06-14
- 更新時刻
- 2024-12-05 12:47:52 +0900
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
- ジャーナル論文
- 著者
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Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
Takanobu Hiroto (author) (この著者で検索)National Institute for Materials Science
;
Takaaki Mano (author) (この著者で検索)National Institute for Materials Science
;
;Yuri Itokazu (author) (この著者で検索)Masafumi Jo (author) (この著者で検索)
- キーワード
- MOVPE, GaN, InN, InGaN, XRD, Superlattice
- 刊行年月日
- 2026-03-21
- 更新時刻
- 2026-04-03 09:31:08 +0900
Uncovering crystal structure evolution via nanobeam X-ray diffraction with a continuity-driven machine learning approach
- ジャーナル論文
- 著者
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Zhendong Wu (author) (この著者で検索)
https://orcid.org/0000-0002-9882-4133
(unauthenticated)
;
Tetsuya Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (この著者で検索)
;
;Shigeyoshi Usami (author) (この著者で検索);Masayuki Imanishi (author) (この著者で検索);Yusuke Mori (author) (この著者で検索);Junichi Takino (author) (この著者で検索);Kazushi Sumitani (author) (この著者で検索)Yasuhiko Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
Shigeru Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Akira Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, nanoXRD, ML
- 刊行年月日
- 2026-02-15
- 更新時刻
- 2026-02-26 12:30:06 +0900
First-principles lattice thermal conductivity calculation for GaN / F-43m (216) / materials id 830
- データセット
- コレクション
- MDR lattice thermal conductivity calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
- キーワード
- Lattice thermal conductivity, GaN
- 刊行年月日
- 更新時刻
- 2026-01-24 12:32:02 +0900
Continuous real-time O 1s core XPS spectra of H2O adsorption on +c Ga-face and m-plane surfaces of GaN
- データセット
- 著者
-
SUMIYA, Masatomo (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, Gallium nitride, Surface oxidation, Oxidation, MOS structure, XPS, SPring-8
- 刊行年月日
- 2022-12-31
- 更新時刻
- 2024-01-05 22:11:14 +0900