論文 Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction

T. Hamachi ORCID ; T. Tohei ORCID ; Y. Hayashi SAMURAI ORCID ; S. Usami ORCID ; M. Imanishi ; Y. Mori ; K. Sumitani ; Y. Imai ORCID ; S. Kimura ORCID ; A. Sakai ORCID

Hamachi 2024 JAP GaN dislocation nanoXRD Na-flux HVPE MDR.pdf
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引用
T. Hamachi, T. Tohei, Y. Hayashi, S. Usami, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, A. Sakai. Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction. Journal of Applied Physics. 2024, 135 (22), . https://doi.org/10.1063/5.0199961
SAMURAI

説明:

(abstract)

Position-dependent three-dimensional reciprocal space mapping (RSM) by nanobeam x-ray diffraction (nanoXRD) was performed to reveal the strain fields produced around individual threading dislocations (TDs) in GaN substrates. The distribution and Burgers vector of TDs for the nanoXRD measurements were confirmed by prerequisite analysis of multi-photon excited photoluminescence and etch pit methods.

権利情報:

キーワード: GaN, Dislocation, SPring-8

刊行年月日: 2024-06-14

出版者: AIP Publishing

掲載誌:

  • Journal of Applied Physics (ISSN: 00218979) vol. 135 issue. 22

研究助成金:

  • Japan Science and Technology Agency J121052565
  • Ministry of Education, Culture, Sports, Science and Technology JP16H06423
  • Murata Science and Education Foundation

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0199961

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更新時刻: 2024-12-05 12:47:52 +0900

MDRでの公開時刻: 2024-12-05 12:47:53 +0900

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