Article Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction

T. Hamachi ORCID ; T. Tohei ORCID ; Y. Hayashi SAMURAI ORCID ; S. Usami ORCID ; M. Imanishi ; Y. Mori ; K. Sumitani ; Y. Imai ORCID ; S. Kimura ORCID ; A. Sakai ORCID

Hamachi 2024 JAP GaN dislocation nanoXRD Na-flux HVPE MDR.pdf
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Citation
T. Hamachi, T. Tohei, Y. Hayashi, S. Usami, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, A. Sakai. Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction. Journal of Applied Physics. 2024, 135 (22), . https://doi.org/10.1063/5.0199961
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Description:

(abstract)

Position-dependent three-dimensional reciprocal space mapping (RSM) by nanobeam x-ray diffraction (nanoXRD) was performed to reveal the strain fields produced around individual threading dislocations (TDs) in GaN substrates. The distribution and Burgers vector of TDs for the nanoXRD measurements were confirmed by prerequisite analysis of multi-photon excited photoluminescence and etch pit methods.

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Keyword: GaN, Dislocation, SPring-8

Date published: 2024-06-14

Publisher: AIP Publishing

Journal:

  • Journal of Applied Physics (ISSN: 00218979) vol. 135 issue. 22

Funding:

  • Japan Science and Technology Agency J121052565
  • Ministry of Education, Culture, Sports, Science and Technology JP16H06423
  • Murata Science and Education Foundation

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/5.0199961

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Updated at: 2024-12-05 12:47:52 +0900

Published on MDR: 2024-12-05 12:47:53 +0900

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