Takayoshi Oshima
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
)
;
Masataka Imura
(Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science)
;
Yuichi Oshima
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
コレクション
引用
説明:
(abstract)GaN mesas were fabricated by sequential dry and wet etching of a +c-oriented GaN layer onto a lattice-matched AlInN layer for future applications of positive beveled edge termination, which is desirable for preventing premature breakdown of power devices. The dry etching produced hexagonal AlInN/GaN mesas surrounded by m-plane sidewalls with six protrusions at the vertices. The subsequent hot phosphoric acid etching selectively etched the AlInN layer to expose and etch the chemically unstable −c surface of the GaN layer, which formed reverse-tapered {10-1-2} facets. The protrusions were sacrificed during the wet etching to prevent undesirable positive tapering at the vertices.
権利情報:
キーワード: GaN, AlInN, etching, positive bevel edge termination
刊行年月日: 2024-08-01
出版者: Japan Society of Applied Physics
掲載誌:
- Applied Physics Express (ISSN: 18820778) vol. 17 issue. 8 086501
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.35848/1882-0786/ad64ba
関連資料:
その他の識別子:
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更新時刻: 2024-08-02 12:30:52 +0900
MDRでの公開時刻: 2024-08-02 12:30:52 +0900