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説明:

We fabricated arrays of circular, square, and triangular air holes in GaN by the conventional method using the electron beam lithography and reactive ion etching. The vertex radius of curvature for the square and triangular holes was reduced by shape modification. The minimum vertex radius of curvature for the 100-nm-size square and triangular holes were 17 and 11 nm, respectively.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/adde9a.

キーワード: GaN, EB lithography

刊行年月日: 2025-06-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 64 issue. 6 066504

研究助成金:

• JSPS KAKENHI 23H01863
• Advanced Research Infrastructure for Materials and Nanotechnology in Japan (ARIM) JPMXP1223BA0011

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6081

公開URL: https://doi.org/10.35848/1347-4065/adde9a

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更新時刻: 2025-12-26 10:20:58 +0900

MDRでの公開時刻: 2026-06-16 08:28:41 +0900