Description:
(abstract)We fabricated arrays of circular, square, and triangular air holes in GaN by the conventional method using the electron beam lithography and reactive ion etching. The vertex radius of curvature for the square and triangular holes was reduced by shape modification. The minimum vertex radius of curvature for the 100-nm-size square and triangular holes were 17 and 11 nm, respectively.
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This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/adde9a.
Keyword: GaN, EB lithography
Date published: 2025-06-01
Publisher: IOP Publishing
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Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.6081
First published URL: https://doi.org/10.35848/1347-4065/adde9a
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Updated at: 2025-12-26 10:20:58 +0900
Published on MDR: 2026-06-16 08:28:41 +0900
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