Journal article Reducing vertex radius of curvature for 100 nm size square and triangular holes in GaN by shape modification
Kohei Tuzuku (author) (Search by this author)
; ORCID SAMURAI ;
Hironori Okumura (author) (Search by this author)
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Citation
Kohei Tuzuku, Masataka Imura, Hironori Okumura. Reducing vertex radius of curvature for 100 nm size square and triangular holes in GaN by shape modification. Japanese Journal of Applied Physics. 2025, 64 (6), 066504. https://doi.org/10.35848/1347-4065/adde9a

Description:

(abstract)

We fabricated arrays of circular, square, and triangular air holes in GaN by the conventional method using the electron beam lithography and reactive ion etching. The vertex radius of curvature for the square and triangular holes was reduced by shape modification. The minimum vertex radius of curvature for the 100-nm-size square and triangular holes were 17 and 11 nm, respectively.

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Keyword: GaN, EB lithography

Date published: 2025-06-01

Publisher: IOP Publishing

Journal:

  • Japanese Journal of Applied Physics (ISSN: 00214922) vol. 64 issue. 6 066504

Funding:

  • JSPS KAKENHI 23H01863
  • Advanced Research Infrastructure for Materials and Nanotechnology in Japan (ARIM) JPMXP1223BA0011

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6081

First published URL: https://doi.org/10.35848/1347-4065/adde9a

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Updated at: 2025-12-26 10:20:58 +0900

Published on MDR: 2026-06-16 08:28:41 +0900

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