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We grew GaN/InxGa1–xN superlattices (SLs) on GaN/sapphire substrates by atmospheric-pressure metal-organic vapor phase epitaxy (MOVPE) and determined the InxGa1–xN growth rate using high-resolution X-ray diffraction analysis. The use of SL structures substantially reduced the influence of strain relaxation, phase separation, and mixed 2D/3D growth modes, enabling reliable extraction of the effective GaN and InN growth rates within the alloy. By maintaining identical temperature, pressure, and gas-flow balance, we precisely estimated the individual growth rates and proposed a model that explicitly separates incorporation and desorption processes. For low In composition (xIn < 0.25), the GaN and InN rates exhibit negligible mutual interaction and depend solely on temperature under constant pressure and flow balance. The model successfully predicts InxGa1–xN growth rates using independent incorporation and desorption terms, and its applicability is confirmed for In vapor-phase ratios < 0.7 and sufficiently high V/III ratios, while limitations are identified under excess-In or low-temperature conditions. These results provide practical guidelines for optimizing MOVPE growth, contributing to the efficient design of active and SL layers for high-power light-emitting diodes and green laser diodes.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: MOVPE, GaN, InN, InGaN, XRD, Superlattice

刊行年月日: 2026-03-21

出版者: AIP Publishing

掲載誌:

• Journal of Applied Physics (ISSN: 00218979) vol. 139 issue. 11 115703

研究助成金:

• JSPS KAKENHI JP25K01297
• New Energy and Industrial Technology Development Organization 24017480

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6243

公開URL: https://doi.org/10.1063/5.0307826

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更新時刻: 2026-04-03 09:31:08 +0900

MDRでの公開時刻: 2026-04-03 12:26:40 +0900