26 件のレコードが見つかりました。
High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
- ジャーナル論文
- 著者
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;Qihao Zhang (author) (この著者で検索)Jiangwei Liu (author) (この著者で検索)National Institute for Materials Science
;
;Chunming Tu (author) (この著者で検索);Dongyuan Zhai (author) (この著者で検索);Min He (author) (この著者で検索)Jiwu Lu (author) (この著者で検索) - キーワード
- Ga2O3, Transistor
- 刊行年月日
- 2023-01-03
- 更新時刻
- 2025-01-04 16:30:50 +0900
Epitaxial relationship of NiO on (-102) β-Ga2O3
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Shinji Nakagomi (author) (この著者で検索)Ishinomaki Senshu University Faculty of Science and Engineering
- キーワード
- Ga2O3, NiO, epitaxial relationship
- 刊行年月日
- 2023-12-01
- 更新時刻
- 2024-11-23 16:30:35 +0900
Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)
- ジャーナル論文
- 著者
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Yuhua Tsai (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
;
;Yusuke Hashimoto (author) (この著者で検索)NAIST;ZeXu Sun (author) (この著者で検索)NAIST;Takuya Moriki (author) (この著者で検索)NAIST;Takashi Tadamura (author) (この著者で検索)NAISTTakahiro Nagata (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
;
;Piero Mazzolini (author) (この著者で検索)University of Parma;Antonella Parisini (author) (この著者で検索)University of Parma;Matteo Bosi (author) (この著者で検索)IMEM-CNR;Luca Seravalli (author) (この著者で検索)IMEM-CNR;Tomohiro Matsushita (author) (この著者で検索)NAISTYoshiyuki Yamashita (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
- キーワード
- Ga2O3, κ-Ga2O3
- 刊行年月日
- 2024-04-03
- 更新時刻
- 2025-03-07 12:30:11 +0900
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
- ジャーナル論文
- 著者
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Yuhua Tsai (author) (この著者で検索)National Institute for Materials Science
;
Masaaki Kobata (author) (この著者で検索)
https://orcid.org/0000-0002-9710-6308
(unauthenticated)
;
Tatsuo Fukuda (author) (この著者で検索)
https://orcid.org/0000-0002-4832-5862
(unauthenticated)
;
Hajime Tanida (author) (この著者で検索)
https://orcid.org/0009-0002-8468-7315
(unauthenticated)
;
;Toru Kobayashi (author) (この著者で検索)Yoshiyuki Yamashita (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, dopant, b-Ga2O3
- 刊行年月日
- 2024-03-11
- 更新時刻
- 2024-03-19 12:30:20 +0900
Ab-initio phonon calculation for Ga2O3 / C2/m (12) / materials id 886
- データセット
- コレクション
- MDR phonon calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science MaDIS
- キーワード
- Phonon, Ga2O3, C2/m (12)
- 刊行年月日
- 更新時刻
- 2023-05-14 18:54:18 +0900
Ab-initio phonon calculation for Ga2O3 / R-3c (167) / materials id 1243
- データセット
- コレクション
- MDR phonon calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science MaDIS
- キーワード
- Phonon, Ga2O3, R-3c (167)
- 刊行年月日
- 更新時刻
- 2023-05-14 18:35:31 +0900
Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)
;
Rie Togashi (author) (この著者で検索)
https://orcid.org/0000-0002-9467-0755
(unauthenticated)
;
Yuichi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, forming gas, anisotropic etching, plasma-free process
- 刊行年月日
- 2024-12-31
- 更新時刻
- 2024-07-31 12:30:20 +0900
Step-and-terrace surface formation on (001) β-Ga2O3 by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, TMAH, Wet etching
- 刊行年月日
- 2025-08-01
- 更新時刻
- 2025-08-18 16:30:36 +0900
Wet etching of (−102) β-Ga 2 O 3 with tetramethylammonium hydroxide (TMAH)
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, wet etching, TMAH
- 刊行年月日
- 2026-12-31
- 更新時刻
- 2026-06-11 15:11:01 +0900