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論文・データセット
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資源タイプ
論文(16)
キーワード
GaN (16)
HAXPES (2)
SPring-8 (2)
nanoXRD (2)
4D-STEM (1)
ABF-STEM (1)
AlInN (1)
Amorphous structure (1)
Diamond (1)
Dislocation (1)
(more)
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資源タイプ: journal_article
キーワード: GaN
全ての絞り込みを解除
16 件のレコードが見つかりました。
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
論文
著者
Takayoshi Oshima
;
Masataka Imura
;
Yuichi Oshima
キーワード
GaN
,
AlInN
,
etching
,
positive bevel edge termination
刊行年月日
2024-08-01
更新時刻
2024-08-02 12:30:52 +0900
Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
論文
著者
S. Yamada
; A. Fujimoto ;
S. Yagi
;
H. Narui
; E. Yamaguchi ;
Y. Imanaka
キーワード
GaN
,
Double Heterostructures
,
Hole gas
,
Magnetoresistance
,
Spin-Orbit coupling
刊行年月日
2024-06-24
更新時刻
2024-07-13 08:30:10 +0900
Classification for transmission electron microscope images from different amorphous states using persistent homology
論文
著者
Fumihiko Uesugi
;
Masashi Ishii
キーワード
Amorphous structure
,
TEM image simulation
,
GaN
,
persistent homology
刊行年月日
2022-06-06
更新時刻
2024-07-04 16:32:11 +0900
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
論文
著者
Shigefusa F. Chichibu ; Kohei Shima ; Akira Uedono ; Shoji Ishibashi ; Hiroko Iguchi ; Tetsuo Narita ; Keita Kataoka ; Ryo Tanaka ; Shinya Takashima ; Katsunori Ueno ; Masaharu Edo ; Hirotaka Watanabe ; Atsushi Tanaka ; Yoshio Honda ; Jun Suda ; Hiroshi Amano ; Tetsu Kachi ;
Toshihide Nabatame
;
Yoshihiro Irokawa
;
Yasuo Koide
キーワード
GaN
刊行年月日
2024-05-14
更新時刻
2024-05-09 16:30:16 +0900
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
論文
著者
色川 芳宏
;
大井 暁彦
;
生田目 俊秀
;
小出 康夫
キーワード
GaN
,
hydrogen
,
Schottky barrier height
刊行年月日
2024-04-01
更新時刻
2024-04-10 16:30:21 +0900
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
論文
著者
Shunsuke Yamashita
; Sei Fukushima ;
Jun Kikkawa
; Ryoji Arai ;
Yuya Kanitani
;
Koji Kimoto
; Yoshihiro Kudo
キーワード
defect
,
GaN
,
EELS
,
4D-STEM
,
HAADF-STEM
,
ABF-STEM
,
HAXPES
刊行年月日
2024-03-01
更新時刻
2024-03-19 16:56:29 +0900
キーワード
GaN
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HAXPES
(2)
SPring-8
(2)
nanoXRD
(2)
4D-STEM
(1)
ABF-STEM
(1)
AlInN
(1)
Amorphous structure
(1)
Diamond
(1)
Dislocation
(1)
Double Heterostructures
(1)
EELS
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FNO
(1)
HAADF-STEM
(1)
HEMT
(1)
Hole gas
(1)
In situ
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ML
(1)
MOCVD
(1)
Machine learning
(1)
Magnetoresistance
(1)
Proton
(1)
Radiation irradiations
(1)
Schottky barrier diode
(1)
Schottky barrier height
(1)
Spin-Orbit coupling
(1)
Strain
(1)
TEM image simulation
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Vertical-type PN junction diode
(1)
Xe
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calculation
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defect
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defect passivation
(1)
diamond
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etching
(1)
fluorination
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gallium nitride
(1)
heat spreader
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hydrogen
(1)
nitrosyl fluoride
(1)
persistent homology
(1)
positive bevel edge termination
(1)
thermal conductivity
(1)
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