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Changes in the hydrogen-induced Schottky barrier height (ΦB) of Pt/GaN rectifiers fabricated on free-standing GaN substrates were investigated using current–voltage, capacitance–voltage, impedance spectroscopy, and current–time measurements. Ambient hydrogen lowered the ΦB and reduced the resistance of the semiconductor space–charge region while only weakly affecting the ideality factor, carrier concentration, and capacitance of the semiconductor space–charge region. The changes in the ΦB were reversible; specifically, the decrease in ΦB upon hydrogen exposure occurred quickly, but the recovery was slow. The results also showed that exposure to dry air and/or the application of a reverse bias to the Schottky electrodes accelerated the reversion compared with the case without the applied bias. The former case resulted in fast reversion because of the catalytic effect of Pt. The latter case, by contrast, suggested that hydrogen was incorporated into the Pt/GaN interface oxides as positive mobile charges. Moreover, both exposure to dry air and the application of a reverse bias increased the ΦB of an as-loaded sample from 0.91 to 1.07 eV, revealing that the ΦB of Pt/GaN rectifiers was kept lower as a result of hydrogen incorporation that likely occurred during device processing and/or storage.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: GaN, hydrogen, Schottky barrier height

刊行年月日: 2024-04-01

出版者: Electrochemical Society, Inc.

掲載誌:

• ECS Journal of Solid State Science and Technology (ISSN: 21628777) vol. 13 issue. 4 p. 45002-45002

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1149/2162-8777/ad3959

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更新時刻: 2024-04-10 16:30:21 +0900

MDRでの公開時刻: 2024-04-10 16:30:21 +0900