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Magnetoresistance (MR) of two-dimensional hole gas (2DHG) samples fabricated from GaN/AlxGa1-xN/GaN (x =0.2–0.25) double hetero- structures has been investigated to reveal subband electronic parameters and low field spin splitting properties. In sample with high sheet hole density (Ps<1.3 x10^13/cm2), 2DHG occupies two subbands, while in samples with low Ps ( <0.3x101^3/cm2), only one subband is occupied. In both samples, the low-field spin–orbit coupling constant a of 2DHG was obtained independently from the weak anti-localization data and the fast Fourier transform analysis of MR oscillations. The results yield a constant a ~0.53–6.1x10^-12 eVm and a spin splitting deltaE=2akf~0.6–6.0 meV. These results strongly depend on the hole mass value, but appear to be of the same order as the results for 2D electron gas in similar material systems and structures.

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  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Yamada, S., Fujimoto, A., Yagi, S., Narui, H., Yamaguchi, E., & Imanaka, Y. (2024). Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures. Applied Physics Letters, 124(26) and may be found at https://doi.org/10.1063/5.0208784

Keyword: GaN, Double Heterostructures, Hole gas, Magnetoresistance, Spin-Orbit coupling

Date published: 2024-06-24

Publisher: AIP Publishing

Journal:

• Applied Physics Letters (ISSN: 00036951) vol. 124 issue. 26

Funding:

• 日本学術振興会 20K04631 (InGaAs量子井戸2層電子系による多値論理素子開発の研究)

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4590

First published URL: https://doi.org/10.1063/5.0208784

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Updated at: 2024-07-13 08:30:10 +0900

Published on MDR: 2024-07-13 08:30:10 +0900